Lateral analysis of conventional and field-induced junction solar cells

Access Full Text

Lateral analysis of conventional and field-induced junction solar cells

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
IEE Proceedings J (Optoelectronics) — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

We examine the flow of current, parallel to the front surface, in the conventional p-n junction and in the field induced junction (FIJ) solar cell. The influence of grid finger spacing and gate voltage (FIJ cell) are studied, and the I-V characteristics of the cells computed. An algorithm for the determination of the optimum finger spacing is demonstrated.

Inspec keywords: solar cells

Other keywords: p- n junction; gate voltage; field-induced junction solar cells; I-V characteristics; grid finger spacing

Subjects: Solar cells and arrays; Photoelectric conversion; solar cells and arrays

References

    1. 1)
      • (1976) , Modern numerical methods for ordinary differential equations.
    2. 2)
      • K. Okamoto . Photocurrent and spectral characteristics of field-induced junctions. Solid-State Electron. , 1155 - 1161
    3. 3)
      • A.L. Fahrenbruch , R.H. Bube . (1983) , Fundamentals of solar cells, photovoltaic solar energy conversion.
    4. 4)
      • : `Terrestrial photovoltaic measurement procedures', Report ERDA/NASA/1022–77/16, June 1977.
    5. 5)
      • Van Hallen, P., Thomas, R.E., Mertens, R., Van Overstraeten, R.: `Inversion layer silicon solar cells with MIS Contact Grids', IEEE photovoltaic specialists conference, 12 proceedings, 1976, p. 907–912.
    6. 6)
      • J.R. Brews , D. Kahng . (1981) Physics of the MOS Transistor, Silicon integrated circuits.
    7. 7)
      • K. Rajkanan , J. Singh , J. Shewchun . Absorption coefficient of silicon for solar cell calculations. Solid-State Electron. , 793 - 795
    8. 8)
      • H.F. Wolf . (1969) , Silicon semiconductor data.
    9. 9)
      • Call, R.L.: `Inversion layer solar cell fabrication and evaluation', No. 953461, Final Report, JPL Contract, September 1973.
    10. 10)
      • Salter, G.C., Thomas, R.E.: `Induced junction silicon solar cells', 11th photovoltaic specialists conference, 1975, Arizona, p. 364–370, Conf. Record.
    11. 11)
      • E.L. Heasell . An analysis of the collection mechanisms in inversion layer solar cells. Solid-State Electron. , 5 , 475 - 483
    12. 12)
      • Mitchell, K.W.: Tech. dig. IEEE int. electron devices meeting, 1977, Washington, D.C., 229.
    13. 13)
      • S.M. Sze . (1981) , Physics of semiconductor devices.
    14. 14)
      • P.E. Gill , G.F. Miller . An algorithm for the integration of unequally spaced data. Comp. J. , 80 - 83
    15. 15)
      • Salter, G.D.: `Investigation of silicon solar cells with field induced junctions', January 1975, M.Eng. Thesis, Carleton University.
    16. 16)
      • R.S. Muller , T.H. Kamins . (1977) , Device electronics for integrated circuits.
    17. 17)
      • M.A. Green , A.W. Blake , S. Jiqun , E.M. Keller , S.R. Wenham . High efficiency silicon solar cells. IEEE Trans. , 679 - 683
http://iet.metastore.ingenta.com/content/journals/10.1049/ip-j.1986.0024
Loading

Related content

content/journals/10.1049/ip-j.1986.0024
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading