Transient analysis of a triangular-barrier bulk unipolar diode

Access Full Text

Transient analysis of a triangular-barrier bulk unipolar diode

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
IEE Proceedings I (Solid-State and Electron Devices) — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

The transient analysis of a triangular-barrier bulk unipolar diode (TB) is based on the conduction currents associated with both the majority and minority carriers together with a displacement current associated with the space change regions. During the turn-on and turn-off transients the conduction current, which is determined by thermionic emission-diffusion theory, is shown to have negligible effect compared with the displacement current. The transients and steadystate currents of a typical GaAs TB are compared to those from a device simulator which includes thermionic emission over the barrier, and are shown to be in excellent agreement. 10% time constants are determined by an analytic expression for both turn-on and turn-off and are shown to be equivalent and dependent on the applied DC bias and independent of the position of the p+plane in the undoped region.

Inspec keywords: transient response; semiconductor diodes

Other keywords: triangular-barrier bulk unipolar diode; steady-state currents; DC bias; conduction currents; thermionic emission-diffusion theory; minority carriers; turn-off; semiconductor diodes; GaAs; turn-on; displacement current; space charge regions; transient analysis; device simulator

Subjects: Bulk effect devices

References

    1. 1)
      • C. Hilsum . Simple empirical relationship between mobility and carrier concentration. Electron. Lett.
    2. 2)
      • S.E.D. Habib , K. Board . Theory of triangular-barrier bulk unipolar diodes including minority-carrier effects. IEEE Trans. , 90 - 96
    3. 3)
      • R.F. Kazarinov , S. Luryi . Change injection over triangular barriers in unipolar semiconductor structures. Appl. Phys. Lett. , 810 - 812
    4. 4)
      • R.J. Malik , T.R. Aucoin , R. Ross , K. Board , C.E.C. Wood , L.F. Eastman . Planar-doped barriers in GaAs by molecular beam epitaxy. Electron. Lett.
    5. 5)
      • J.A. Barnard , F.E. Najjar , L.F. Eastman . The steady-state optical response of the homojunction triangular barrier photodiode. IEEE Trans. , 1396 - 1403
    6. 6)
      • Chen, C.Y., Cno, A.Y., Garbinski, P.A., Bethea, C.G., Levine, B.F.: `A new majority carrier photodetector for the optical communication systems', WE-71 in Proc. 3rd Int. Conf. on Integrated Optics and Optical Fiber Communications, 1981.
    7. 7)
      • Board, K., Singer, K., Malik, R., Wood, C.E.C., Eastman, L.K.: `A planar-doped barrier switching device', Proc. 8th Biennial Cornell Microwave Conf., 1981, p. 115–124.
    8. 8)
      • J.G. Ruch , W. Fawcett . Temperature dependence of transport properties of Gallium Arsenide determined by a Monte Carlo method. J. Appl. Phys. , 3843 - 3849
    9. 9)
      • A. McCowen , S.B.M. Shaari , K. Board . Transient analysis of Schottky-barrier diodes. IEE Proc. I, Solid-State & Electron Dev. , 3 , 71 - 75
    10. 10)
      • C.R. Crowell , S.M. Sze . Current transport in metal-semiconductor barriers. Solid-State Electron. , 1035 - 1048
    11. 11)
      • P.K. Rees , D.G. Parker , J.A. Barnard . Optical switching of a GaAs triangular barrier switch grown by MBE. Electron. Lett. , 265 - 266
    12. 12)
      • J.S. Dixon , R.J. Malik . Sub-harmonic planar doped barrier mixer conversion loss characteristic. IEEE Trans. , 155 - 158
    13. 13)
      • P.K. Rees , J.A. Barnard . Turn-on response of the triangular barrier switch. IEEE Trans. , 1741 - 1744
    14. 14)
      • K. Board . , A review of bulk unipolar diodes and their applications.
    15. 15)
      • K.R. Freeman , G.S. Hobson . The VfT relation of CW Gunn effect devices. IEEE Trans. , 62 - 70
http://iet.metastore.ingenta.com/content/journals/10.1049/ip-i-1.1988.0019
Loading

Related content

content/journals/10.1049/ip-i-1.1988.0019
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading