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Alpha particle induced soft errors in NMOS RAMS: a review

Alpha particle induced soft errors in NMOS RAMS: a review

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The paper aims to explain the alpha particle induced soft error phenomenon using the NMOS dynamic random access memory (RAM) as a model. It discusses some of the many techniques experimented with by manufacturers to overcome the problem, and gives a review of the literature covering most aspects of soft errors in dynamic RAMs. Finally, the soft error performance of current dynamic RAM and static RAM products from several manufacturers are compared.

Inspec keywords: alpha-particle effects; random-access storage; integrated memory circuits; reviews; errors; field effect integrated circuits

Other keywords: dynamic random access memory; DRAM; alpha particle induced soft error; NMOS RAMs; review

Subjects: Semiconductor storage; Other MOS integrated circuits; Memory circuits

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