Novel dynamic random access memory cell using three diodes

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Novel dynamic random access memory cell using three diodes

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© The Institution of Electrical Engineers
Published

A new dynamic random access memory cell, which incorporates three diodes in a composite structure, is proposed and investigated. In the 3-diode memory cell, one diode serves as a storage capacitor and the others serve as switches. The cell requires only three interconnect lines and can be fabricated with standard bipolar technology. The write, read, and standby operations of the cell are analysed and simulated.

Inspec keywords: random-access storage; integrated memory circuits; bipolar integrated circuits

Other keywords: read operation; interconnect lines; standby operations; storage capacitor; dynamic random access memory cell; 3-diode memory cell; bipolar technology; composite structure; write operation; switches

Subjects: Memory circuits; Semiconductor storage; Bipolar integrated circuits

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