http://iet.metastore.ingenta.com
1887

Photovoltaic effects of GaAs MESFET layers

Photovoltaic effects of GaAs MESFET layers

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
IEE Proceedings I (Solid-State and Electron Devices) — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The photovoltaic properties of GaAs MESFET layers are studied by varying illumination wavelength and temperature for two different electrode geometry devices. The active layer-substrate photoresponse is determined by the substrate deep traps. A significant contribution to the Dember effect is observed when the device electrode path is extended over the substrate. The photovoltage response to amplitude modulated illumination is limited by trapping effects within the substrate

References

    1. 1)
      • T. Itoh , H Yanai . Stability of performance and interfacial problems in GaAs MESFETs. IEEE Trans. , 1037 - 1045
    2. 2)
      • C. Kocot , C. Stolte . Backgating in GaAs MESFETs. IEEE Trans. , 1059 - 1064
    3. 3)
      • H. Goronkin , M.S. Birrittella , W.C. Seelback , R.L. Vaikus . Backgating and light sensitivity in ion-implemented GaAs integrated circuits. IEEE Trans. , 845 - 850
    4. 4)
      • W.D. Edwards , R.F. Haythornthwaite . Laser and electron beam scanning of GaAs FETs. Microelectron. & Reliab. , 735 - 746
    5. 5)
      • G.M. Martin , G. Jacob , G. Poiblaud , A. Goltxens , C. Schwab . Identification and analysis of near-infrared absorption bands in undoped and Cr doped semi-insulating GaAs crystals. Inst. Phys. Conf. Ser. 59 , 281 - 286
    6. 6)
      • Martin, G.M.: `Key electrical parameters in semi-insulating materials; the methods to determine them in GaAs', Proceedings of Semi-insulating III-V Materials, 1980, Nottingham , p. 13–28.
    7. 7)
      • H.J. Hovel . Solar cells. Semicond. and Semim. , 80 - 83
    8. 8)
      • Rouger, J.M., Perichon, R.A., Mottet, S., Forrest, J.R.: `Etude du comportement du transistor et effect de champ AsGa sous injection optique quasi-ponctuelle', IV Journees Nationales Microondes, June 1984, p. 76–77.
http://iet.metastore.ingenta.com/content/journals/10.1049/ip-i-1.1985.0034
Loading

Related content

content/journals/10.1049/ip-i-1.1985.0034
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address