Threshold shift of NMOS transistors due to high energy arsenic source/drain implantation

Threshold shift of NMOS transistors due to high energy arsenic source/drain implantation

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NMOS transistors using high-energy source/drain implantation have been found to have negative threshold shifts. These shifts are shown to be due to arsenic penetration of the polysilicon gate. An implant model of the three-layer structure has been used to predict the threshold shift, and good agreement is found with experimental results.


    1. 1)
      • E. Demoulin , F. van de Wiele . (1977) Ion implanted MOS transistors, Process and Device Modelling for Integrated Circuit Design.
    2. 2)
      • K. Ziegler , E. Klausman , S. Kar . Determination of the semiconductor doping profile right up to its surface using the MIS capacitor. Solid-State Electron , 189 - 198
    3. 3)
      • Antoniadis, D.A., Hansen, S.E., Dutton, R.W.: `SUPREM II—a program for IC process and simulation', SEL 78-020, Stanford Electronics Laboratories report, June 1978.
    4. 4)
      • C.P. Ho , J.D. Plummer , S.E. Hansen , R.W. Dutton . VLSI process modelling—SUPREM III. IEEE Trans. , 1438 - 1453
    5. 5)
      • G.A.J. Amaratunga , K.A. Sabine , A.G.R. Evans . Modelling of an implantation in a three-layer structure by the method of dose matching. IEEE Trans.
    6. 6)
      • H. Ryssel , K. Hoffman . (1982) Ion implantation, Process and Device Simulation for MOS-VLSI Circuits.
    7. 7)
      • J.R. Brews . Threshold shifts due to nonuniform doping profiles in surface channel MOSFETs. IEEE Trans. , 1696 - 1710

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