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Bumpless monotonic bicubic interpolation for MOSFET device modelling

Bumpless monotonic bicubic interpolation for MOSFET device modelling

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© The Institution of Electrical Engineers
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A bumpless monotonic bicubic interpolation (MBI) technique is proposed. The method is applied to MOSFET device modelling for guessing at a very smooth interpolated curved surface. Monotonic increase in a two-dimensional surface can be held, even if the actual device characteristics show steepest change, like punchthrough characteristics. The technique can be utilised for very small number micron and/or submicron VLSI MOSFET device modelling.

Inspec keywords: interpolation; circuit analysis computing; digital simulation; semiconductor device models; field effect integrated circuits; insulated gate field effect transistors; VLSI

Other keywords: smooth interpolated curved surface; bumpless monotonic bicubic interpolation; submicron VLSI; simulation; MOSFET device modelling; micron dimensions

Subjects: Semiconductor device modelling, equivalent circuits, design and testing; Insulated gate field effect transistors; Computer-aided circuit analysis and design; Other MOS integrated circuits

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