A comparison of the photovoltaic and electroluminescent effects in GaP/Langmuir-Blodgett film diodes

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A comparison of the photovoltaic and electroluminescent effects in GaP/Langmuir-Blodgett film diodes

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IEE Proceedings I (Solid-State and Electron Devices) — Recommend this title to your library

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© The Institution of Electrical Engineers
Published

The electrical properties of a series of Au/Langmuir-Blodgett film/n-GaP metal-insulatorsemiconductor diodes are reported. The fabrication of diodes incorporating varying numbers of monolayers on the same GaP substrate has enabled a direct comparison of device properties with insulator thickness to be made. The devices have been operated both as photovoltaic solar cells and as electroluminescent diodes. The Langmuir-Blodgett film thickness required to optimise the electroluminescence efficiency is found to be 21 nm. This corresponds to the insulator thickness at which the short-circuit photocurrent of the solar cell begins to decrease. Results are discussed in terms of a simple energy band diagram for the metal-insulator-semiconductor structure.

Inspec keywords: gold; III-V semiconductors; light emitting diodes; photovoltaic cells; photovoltaic effects; gallium compounds; luminescent devices; solar cells; Langmuir-Blodgett films; electroluminescence; metal-insulator-semiconductor devices

Other keywords: GaP/Langmuir-Blodgett film diodes; Au/Langmuir-Blodgett film; electrical properties; metal-insulator-semiconductor diodes; electroluminescent effects; insulator thickness; n-type GaP substrate; photovoltaic solar cells; MIS structure; LED; short-circuit photocurrent; III-V semiconductor

Subjects: Solar cells and arrays; Metal-insulator-semiconductor structures; Light emitting diodes; Photoelectric devices; Photoelectric conversion; solar cells and arrays

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