Optical absorption in the window layer and its contribution to the spectral response of a pGa1-x Alx As/p-GaAs/n-GaAs solar cell

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Optical absorption in the window layer and its contribution to the spectral response of a pGa1-x Alx As/p-GaAs/n-GaAs solar cell

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© The Institution of Electrical Engineers
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The influence of the aluminium content on the photovoltaic performance of the p-Ga1−xAlxAs/p-GaAs/n-GaAs structure is investigated. An enhanced high-photon-energy spectral response is observed when the window layer has a direct gap. Also short-circuit currents and conversion efficiencies calculated in these devices indicate high values in the neighbourhood of those obtained with a high aluminium content. This is due to the high mobilities characterising direct valley electrons; i.e. the contribution of the window layer to the cell current is greatly enhanced, to the extent that the increased photogeneration in this layer does not lead to any significant loss.

Inspec keywords: solar cells; short-circuit currents; aluminium compounds; III-V semiconductors; gallium arsenide; light absorption; photovoltaic effects

Other keywords: direct valley electrons; photogeneration; conversion efficiencies; optical absorption; spectral response; cell current; Al content; Ga1-xAlxAs-GaAs-GaAs p-p-n solar cell; window layer; photovoltaic performance; high mobilities; shortcircuit currents; direct gap

Subjects: Solar cells and arrays; Photoelectric conversion; solar cells and arrays

References

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      • J.A. Hutchby , R.L. Fudurich . Theoretical analysis of AlxGa1−xAs-GaAs graded band-gap solar cell. J. Appl. Phys. , 3140 - 3151
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      • J.M. Woodall , H.J. Hovel . High-efficiency Ga1−xAl1As-GaAs solar cells. Appl. Phys. Lett. , 379 - 381
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      • M.P. Thekaekara . (1974) Data on incident solar energy, The energy crisis and energy from the sun.
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      • H.J. Hovel . (1975) , Semiconductors and semimetals—Vol. 11, Solar cells.
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