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The influence of the aluminium content on the photovoltaic performance of the p-Ga1−xAlxAs/p-GaAs/n-GaAs structure is investigated. An enhanced high-photon-energy spectral response is observed when the window layer has a direct gap. Also short-circuit currents and conversion efficiencies calculated in these devices indicate high values in the neighbourhood of those obtained with a high aluminium content. This is due to the high mobilities characterising direct valley electrons; i.e. the contribution of the window layer to the cell current is greatly enhanced, to the extent that the increased photogeneration in this layer does not lead to any significant loss.
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http://iet.metastore.ingenta.com/content/journals/10.1049/ip-i-1.1984.0045
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