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Optical absorption in the window layer and its contribution to the spectral response of a pGa1-x Alx As/p-GaAs/n-GaAs solar cell

Optical absorption in the window layer and its contribution to the spectral response of a pGa1-x Alx As/p-GaAs/n-GaAs solar cell

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The influence of the aluminium content on the photovoltaic performance of the p-Ga1−xAlxAs/p-GaAs/n-GaAs structure is investigated. An enhanced high-photon-energy spectral response is observed when the window layer has a direct gap. Also short-circuit currents and conversion efficiencies calculated in these devices indicate high values in the neighbourhood of those obtained with a high aluminium content. This is due to the high mobilities characterising direct valley electrons; i.e. the contribution of the window layer to the cell current is greatly enhanced, to the extent that the increased photogeneration in this layer does not lead to any significant loss.

References

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      • Hovel, H.J., Woodall, J.M.: `Theoretical and experimental evaluations of Ga', Proceedings of the 10th IEEE Photovoltaic Specialists Conference, November 1973, 13, p. 25–30, 15.
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      • H.J. Hovel . (1975) , Semiconductors and semimetals—Vol. 11, Solar cells.
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      • J.A. Hutchby , R.L. Fudurich . Theoretical analysis of AlxGa1−xAs-GaAs graded band-gap solar cell. J. Appl. Phys. , 3140 - 3151
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      • Sutherland, J.E.: `A computer analysis of heterojunction and graded bandgap solar cells', 1977, Ph.D. thesis, Graduate Faculty of North Carolina State University, Rayleigh .
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