Optical absorption in the window layer and its contribution to the spectral response of a pGa1-x Alx As/p-GaAs/n-GaAs solar cell

Optical absorption in the window layer and its contribution to the spectral response of a pGa1-x Alx As/p-GaAs/n-GaAs solar cell

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
IEE Proceedings I (Solid-State and Electron Devices) — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The influence of the aluminium content on the photovoltaic performance of the p-Ga1−xAlxAs/p-GaAs/n-GaAs structure is investigated. An enhanced high-photon-energy spectral response is observed when the window layer has a direct gap. Also short-circuit currents and conversion efficiencies calculated in these devices indicate high values in the neighbourhood of those obtained with a high aluminium content. This is due to the high mobilities characterising direct valley electrons; i.e. the contribution of the window layer to the cell current is greatly enhanced, to the extent that the increased photogeneration in this layer does not lead to any significant loss.


    1. 1)
      • J.M. Woodall , H.J. Hovel . High-efficiency Ga1−xAl1As-GaAs solar cells. Appl. Phys. Lett. , 379 - 381
    2. 2)
      • Hovel, H.J., Woodall, J.M.: `Theoretical and experimental evaluations of Ga', Proceedings of the 10th IEEE Photovoltaic Specialists Conference, November 1973, 13, p. 25–30, 15.
    3. 3)
      • H.J. Hovel . (1975) , Semiconductors and semimetals—Vol. 11, Solar cells.
    4. 4)
      • J.A. Hutchby , R.L. Fudurich . Theoretical analysis of AlxGa1−xAs-GaAs graded band-gap solar cell. J. Appl. Phys. , 3140 - 3151
    5. 5)
      • M.P. Thekaekara . (1974) Data on incident solar energy, The energy crisis and energy from the sun.
    6. 6)
      • Sutherland, J.E.: `A computer analysis of heterojunction and graded bandgap solar cells', 1977, Ph.D. thesis, Graduate Faculty of North Carolina State University, Rayleigh .

Related content

This is a required field
Please enter a valid email address