Photovoltaic properties of cadmium-telluride/langmuir-film solar cells

Access Full Text

Photovoltaic properties of cadmium-telluride/langmuir-film solar cells

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
IEE Proceedings I (Solid-State and Electron Devices) — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

We report the properties of metal-insulator-semiconductor (MIS) solar cells based on n-type CdTe and an anthracene derivative deposited by the Langmuir-Blodgett technique. The incorporation of the organic insulating layer between a gold electrode and the CdTe is found to increase both the effective barrier height of the device measured in the dark and also the open-circuit voltage measured under illumination conditions. The Langmuir-Blodgett deposition technique has allowed us to investigate, in some detail, the dependence of these characteristics on the thickness of the insulating layer. The optimum efficiency of our devices occurs when theorganic film thickness is approximately 2.4nm.

Inspec keywords: Langmuir films; solar cells; metal-insulator-semiconductor devices; cadmium compounds; photovoltaic effects; II-VI semiconductors

Other keywords: photovoltaic properties; effective barrier height; organic insulating layer; n-type CdTe; MIS solar cell; open-circuit voltage; Langmuir-Blodgett technique; anthracene derivative; CdTe-Langmuir film solar cell

Subjects: Photoelectric conversion; solar cells and arrays; Solar cells and arrays

References

    1. 1)
      • I.M. Dharmadasa , G.G. Robert , M.C. Petty . Electrical properties of au-cdte schottky diodes. J.Phys. D.
    2. 2)
      • Card, H.C.: `Tunnelling MIS structures', Inst. Phys. Conf. Ser. 50, 1979, p. 140–163.
    3. 3)
      • H.C. Card . Photovoltaic properties of mis-schottky barriers. Solid-state electron , 971 - 976
    4. 4)
      • E.H. Rhoderick , R.H. Williams . (1988) , Metal-semiconductor contacts.
    5. 5)
      • Martin, P.J.: `Gas effects on the interface state spectrum of mis devices', 1980, Ph.D. thesis, University Durham.
    6. 6)
      • P.S. Vincett , G.G. Roberts . Electrical and photoelectrical transport properties of langmuir-blodgett films and a discussion of possible device applications. Thin solid films , 135 - 171
    7. 7)
      • D.R. Lillington , W.G. Townsend . Effects of interfacial oxide layers on the performance of silicon schottky barrier solar cells. Appl. Phys. Lett. , 97 - 98
    8. 8)
      • H.C. Card , E.H. Roderick . Studies of tunnel mos diodes i. interface effects in silicon schottky diodes. J. Phys. D , 1589 - 1601
    9. 9)
      • P.T. Landsberg , C.M. Klimpke . Surface recombination effects in an improved theory of a p-type MIS solar cell. Solid-state electron , 1139 - 1145
    10. 10)
      • I.M. Dharmadasa , G.G. Roberts , M.C. Petty . Cadmium telluride/Langmuir film photovoltaic structures. Electron Lett. , 6 , 201 - 202
    11. 11)
      • S.J. Fonash . Outline and comparison of the possible effects present in a metal-thin-film-insulator-semiconductor solar cell. J. Appl. Phys. , 3597 - 3602
    12. 12)
      • D.L. Pulfrey . A minority carrier mis solar cell. Solid-state electron , 455 - 457
    13. 13)
      • G.G. Roberts , T.M. McGinnity , W.A. Barlow , P.S. Vincett . A.C. and D.C. conduction in lightly substituted anthracene Langmuir films. Thin solid films , 223 - 232
    14. 14)
      • Hickmott, T.W.: `Dipole layers at the gold-sio', Proceedings of the international conference on the physics of MOS insulaters, 1980, Raleigh, p. 227–231.
    15. 15)
      • P.S. Vincett , W.A. Barlow , F.T. Boyle , J.A. Finney , G.G. Roberts . Preparation of langmuir-blodgett ‘built-up’ multilayer films of a lightly substituted model aromatic, anthracene. Thin solid films , 265 - 277
    16. 16)
      • D.L. Pulfrey . MIS solar cells: a review. IEEE Trans. , 1308 - 1317
    17. 17)
      • Petty, M.C., Roberts, G.G.: `Analysis of ', Inst. Phys. Conf. Ser. 50, 1980, p. 186–192.
    18. 18)
      • B. Lunn , V. Bettridge . Growth of cdte by solvent evaporation. Rev. Phys. Appl. , 151 - 154
http://iet.metastore.ingenta.com/content/journals/10.1049/ip-i-1.1981.0049
Loading

Related content

content/journals/10.1049/ip-i-1.1981.0049
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading