Stability analysis of transverse modes in stripe - geometry injection lasers

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Stability analysis of transverse modes in stripe - geometry injection lasers

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© The Institution of Electrical Engineers
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We analyse the spatial stability of transverse modes in stripe-geometry injection lasers. A parameter is derived as a measure of the potential spatial instability of the modes. The analysis follows the interaction between the optical field and the charge-carrier density as described by the carrier-diffusion and wave equations. A perturbation is applied to an initial configuration of the system, a series solution for the perturbed system is obtained and an index is derived which determines the stability of the initial configuration. Numerical values for the index are obtained from self-consistent solutions of the device equations. It is shown how nonlinearities in the light/current characteristics of the device, together with near-field shifts, are related to values of the instability index in excess of unity.

Inspec keywords: stability; semiconductor junction lasers; laser modes; perturbation techniques

Other keywords: nonlinearities; spatial stability; carrier-diffusion; transverse modes; optical field; charge-carrier density; stripe-geometry injection lasers; perturbation analysis; potential spatial instability; wave equations

Subjects: Semiconductor lasers; Lasing action in semiconductors

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