In the review the processes of ion implantation and ion damage in GaAs and InP are considered. A survey of the basic physics of the implantation/damage processes is outlined together with detailed studies on the annealing required to activate the ions for semiconductor doping. The prospects and current achievements of this technological process in device fabrication are discussed in detail.

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Prospects for ion bombardment and ion implantation in GaAs and InP device fabrication

Prospects for ion bombardment and ion implantation in GaAs and InP device fabrication

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