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Proton-induced X-ray emission studies of generation impurities in silicon

Proton-induced X-ray emission studies of generation impurities in silicon

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  • Author(s): B. Golja 1 ; A.G. Nassibian 1 ; D. Cohen 2
    • View affiliations
    • Affiliations: 1: Department of Electrical & Electronic Engineering, University of Western Australia, Perth, Australia
      2: Department of Electrical & Electronic Engineering, Australian Institute of Nuclear Science & Engineering, Sutherland, Australia
  • Source: Volume 128, Issue 2, February 1981, p. 68 – 72
    DOI:  10.1049/ip-i-1.1981.0022 , Print ISSN 0143-7100, Online ISSN 2053-7980
© The Institution of Electrical Engineers
Published

In the paper we consider how proton-induced X-ray emission (PIXE), using high-energy protons (MeV), can be used as a nondestructive technique for studying impurities in silicon. The basic principles behind PIXE are presented and the PIXE system used is described. Concentrations of various impurities observed in silicon wafers have been determined and comparisons made with the spectrum obtained with the Rutherford backscattering technique.

Inspec keywords: elemental semiconductors; silicon; ion microprobe analysis; impurity distribution

Other keywords: Si; generation impurities; Rutherford backscattering technique; nondestructive technique; elemental semiconductor; proton induced X-ray emission studies

Subjects: Semiconductor doping; Elemental semiconductors; Electron and ion microscopes and techniques; Impurity concentration, distribution, and gradients

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