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Use of VOC/JSC measurements for determination of barrier height under illumination and for fill-factor calculations in Schottky-barrier solar cells

Use of VOC/JSC measurements for determination of barrier height under illumination and for fill-factor calculations in Schottky-barrier solar cells

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IEE Proceedings I (Solid-State and Electron Devices) — Recommend this title to your library

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An experimental study has been made of metal-silicon solar cells, with thin Ag, Au, Cu, Fe and In electrodes. No intentional interfacial layers were introduced and the silicon surfaces were chemically prepared in such a way as to minimise the residual oxide layer. The characteristics of the devices were taken at various illumination levels and the effect of barrier height, series resistance and n-value on the open-circuit voltage and the fill factor were studied. Comparison between theoretical predictions and the experimental results show that Voc/Jsc measurements that provide the n-values appropriate for the expression for the open-circuit voltage also provide a reliable method for experimental barrier-height determination under illumination and that the above ‘true’ n-value should also be used in fill-factor calculations.

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