© The Institution of Electrical Engineers
Dark current/voltage characteristics have been examined as a function of temperature for two structures of A1-pSi m.i.s. solar cells. The solar cells have been prepared with interfacial oxide thickness ranging from 10 Å to 20 Å. The results show that the diode saturation current Jo for all oxide thicknesses behave as a majority-carrier current, highly dependent on the effective metal-to-semiconductor barrier height øms and the oxide-tunnel exponent X1/2δ. From the illuminated current/voltage characteristics the sum of øms and (KT/q)X1/2δ is found to be in the range of 730–1025 mV, increasing with increasing oxide thicknessand acceptor concentration.
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