Conduction in sputtered a-Si-H Schottky-barrier solar cells

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Conduction in sputtered a-Si-H Schottky-barrier solar cells

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© The Institution of Electrical Engineers
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This paper describes the conduction mechanisms in r.f.-sputtered Schottky-barrier solar cells incorporating hydrogenated amorphous Si (a-Si-H). The illumination and temperature dependence of the open-circuit voltage(VOC) and the short-circuit current (Js—c) of the cells are discussed. The properties of the cells containing optimum and nonoptimum a-Si-H and various Schottky metals are contrasted. The temperature dependence of the forward characteristics of the cells is also examined. Three different conduction mechanisms in the Schottky-barrier cells are identified and described.

Inspec keywords: radiofrequency sputtering; elemental semiconductors; silicon; Schottky effect; amorphous semiconductors; hydrogen; solar cells

Other keywords: open circuit voltage; illumination; short circuit current; RF sputtering; conductance mechanism; amorphous Si:H Schottky barrier solar cells

Subjects: Photoelectric conversion; solar cells and arrays; Solar cells and arrays; Amorphous and glassy semiconductors; Semiconductor-metal interfaces; Surface double layers, Schottky barriers, and work functions

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