p-type InP/Langmuir film m.i.s. diodes

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p-type InP/Langmuir film m.i.s. diodes

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IEE Proceedings I (Solid-State and Electron Devices) — Recommend this title to your library

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© The Institution of Electrical Engineers
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The paper reports for the first time the m.i.s. characteristics of p-type InP structures preparaed using a low temperature method. With organic films deposited using the langmuir-Blodgett technique, fairly conventional CV data have been obtained for both bulk single crystals and epitaxial layers, showing that at zero bias, the surface is depleted. Conductance peaks have been observed using weak illumination. The paper also contains a discussion of the principal factors influencing the interaface properties, including substrate etching prior to thin-film deposition.

Inspec keywords: III-V semiconductors; Langmuir films; metal-insulator-semiconductor devices; metal-insulator-semiconductor structures; semiconductor technology; indium compounds

Other keywords: p-type InP/Langmuir film MIS diodes; factors influencing interface properties; low temperature preparation technique; substrate etching; organic films

Subjects: Electrical properties of metal-insulator-semiconductor structures; Semiconductor technology; Metal-insulator-semiconductor structures; II-VI and III-V semiconductors

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