Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Microcomputer-aided interface-state analysis

Microcomputer-aided interface-state analysis

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
IEE Proceedings I (Solid-State and Electron Devices) — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

A semiautomatic measurement system has been developed for evaluating the electronic structure of the interface between an insulator and a semiconductor. The associated microcomputer possesses advanced software which leads to simple operation particularly when used in a real-time mode. An attractive feature of the technique is that admittance data are evaluated in the voltage domain using a modified version of the Simonne method. The Si-SiO2 junction has been used to demonstrate this novel approach although it is equally applicable to other semiconductor-insulator structures.

References

    1. 1)
      • R.J. Kopp , T. Williamson , W.W. Granneman . Instrumentation providing automated data for use in metal-insulator semiconductor studies. ISA Trans. , 209 - 215
    2. 2)
      • E. Klausmann . (1979) The evaluation of transient capacitance measurments on MOS interfaces, Insulating films on semi conductors.
    3. 3)
      • M. Warashina , A. Ushirokowa . Conductance bias method for interface states. Jap. J. App. Phys , 1739 - 1749
    4. 4)
      • Johnson, N.M., Bartelink, D.J., Schulz, M.: Proceedings of the Conference on the Physics of SiO2, 1978, p. 421–427.
    5. 5)
      • C. Lanczos . (1957) , Applied analysis.
    6. 6)
      • J.J. Simonne . A method to extract interface state parameters from the MIS parallel conductance technique. Solid-State Electron. , 121 - 124
    7. 7)
      • M.R. Boudry . An automatic system for broadband complex admittance measurements on MOS structures. J. Phy. E , 237 - 247
    8. 8)
      • Schulz, M.: `MOS interface states', Conference on insulating films on semiconductors, 1979, Durham, p. 87–96, (Inst. of Physics Conf. series No. 50 eds. G.G. Roberts and M.J. Morant).
    9. 9)
      • C.N. Berglund . Surface states at steam grown silicon -silicon dioxide interfaces. IEEE Trans. , 701 - 705
    10. 10)
      • S.C.P. Martin , B.J. Stanier . Microprocessor implementation of number theoretic transforms. IEE J. electron. Circuits & Systems , 1 , 21 - 26
    11. 11)
      • M. Kuhn . A quasi-static technique for MOS c-v surface state measurements. Solid-State Electron. , 873 - 885
    12. 12)
      • H. Deuling , E. Klausmann , A. Goetzberger' . Interface states in Si-SiO2 ‘Interfaces’. Solid-State Electron. , 559 - 571
    13. 13)
      • E.H. Nicollian , A. Goetzberger . The Si-SiO2 interface — electrical properties as determined by the metal Insulator silicon conductance technique. Bell System Tech. J. , 1021 - 1133
    14. 14)
      • J. Shewchun , A. Waxman . Automatic plotting of conductance and capacitance of metal insulator semiconductor diodes or any two terminal complex admitance. Rev. Sci. Instrum. , 115 - 1201
    15. 15)
      • H. Preier . Contributions of surface states to MOS impedance. Appl. Phys. Lett. , 361 - 363
    16. 16)
      • F.F. Kuo , J.F. Kaiser . (1966) , Systems analysis by digital computer.
    17. 17)
      • C.H. Moore . FORTH, a new way to program a minicomputor. Astron. & Astrophys. , 497 - 511
http://iet.metastore.ingenta.com/content/journals/10.1049/ip-i-1.1980.0025
Loading

Related content

content/journals/10.1049/ip-i-1.1980.0025
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address