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Electron and hole photocurrent effects on impatt oscillators

Electron and hole photocurrent effects on impatt oscillators

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IEE Proceedings I (Solid-State and Electron Devices) — Recommend this title to your library

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© The Institution of Electrical Engineers
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Experimental and theoretical results are presented to show the difference between electron- and hole-initiated avalanches on the microwave properties on impatt oscillators under optical illumination. This difference, arising from unequal electron- and hole-ionisation rates, is demonstrated with X-band Si impatt structures suitable for microwave-optical interactions. A large signal impatt model is extended to incorporate the difference between hole and electron photocurrent, with the intrinsic response time of the avalanche depending on photocurrent composition. The model gives good agreement with experimental results of the power dependence upon photocurrent, although additional power saturation mechanisms need to be considered at higher power levels.

Inspec keywords: microwave oscillators; semiconductor device models; photoconductivity; IMPATT diodes; solid-state microwave circuits

Other keywords: unequal electron and hole ionisation rates; power dependence; electron photocurrent effects; Impatt oscillators; hole photocurrent effects; experimental results; microwave properties; Impatt diodes; intrinsic response time; large signal Impatt diode model; optical microwave interaction

Subjects: Oscillators; Photoconducting materials and properties; Junction and barrier diodes; Photoelectric devices; Solid-state microwave circuits and devices

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