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The saturation currents of minority-and majority-carrier m.i.s. solar cells have been compared to find the value of the barrier height ϕ′ms, where the dominating saturation current changes from a majority-carrier current to a minority-carrier current. For an interfacial oxide layer of 20 Å, the value ofϕ′ms has been calculated to be in the range 750-800 mV, whereas for an oxide layer of 10 Å, ϕ′ms, is found to be about 900-950 mV.
References
-
-
1)
-
O.M. Nielsen
.
Effects of minority-carrier storage at the interface state on the fill factor of m.i.s. solar cells.
IEE J. Solid-State & Electron Devices
,
51 -
55
-
2)
-
H.C. Card ,
E.H. Rhoderick
.
Studies of tunnel MOS diodes I. interface effects in silicon schottky diodes.
J. Phys. D
,
1589 -
1601
-
3)
-
O.M. Nielsen
.
Effects of fixed charges in the oxide of thermally oxidized m.i.s. solar cells.
IEE J. Solid-State & Electron Devices
,
167 -
168
-
4)
-
M.A. Green ,
F.D. King ,
J. Shewchun
.
Minority carrier mis tunnel diodes and their application for electron and photo-voltaic energy conversion, I, II.
Solid-State Electron
,
551 -
561
-
5)
-
H.C. Card
.
Potential barriers to electron tunneling in ultrathin films of SiO2.
Solid State Commun.
,
1011 -
1014
-
6)
-
D.L. Pulfrey
.
A minority carrier MIS solar cell.
Solid-State Electron
,
455 -
457
-
7)
-
Green, M.A., Godfrey, R.B., Davies, L.W.: `Large open-circuit photovoltages in silicon minority carrier m.i.s. solar cells', Proceedings of the 12th IEEE Photo. Spec. Conference, 1976, p. 896–899.
-
8)
-
D.R. Lillington ,
W.G. Townsend
.
Effects of inter-facial oxide layers on the performance of silicon schottky-barrier solar cells.
Appl. Phys. Lett.
,
97 -
98
-
9)
-
E.J. Charlson ,
J.C. Lien
.
An al p-silicon MOS photovoltaic cell.
J. Appl. Phys.
,
3982 -
3987
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