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Required minimum value of barrier height in minority-carrier m.i.s. solar cells

Required minimum value of barrier height in minority-carrier m.i.s. solar cells

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IEE Proceedings I (Solid-State and Electron Devices) — Recommend this title to your library

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The saturation currents of minority-and majority-carrier m.i.s. solar cells have been compared to find the value of the barrier height ϕ′ms, where the dominating saturation current changes from a majority-carrier current to a minority-carrier current. For an interfacial oxide layer of 20 Å, the value ofϕ′ms has been calculated to be in the range 750-800 mV, whereas for an oxide layer of 10 Å, ϕ′ms, is found to be about 900-950 mV.

Inspec keywords: metal-insulator-semiconductor devices; semiconductor device models; solar cells; Schottky-barrier diodes

Other keywords: metal insulator semiconductor structure; required minimum barrier height; minority carrier MIS solar cells

Subjects: Metal-insulator-semiconductor structures; Semiconductor device modelling, equivalent circuits, design and testing; Junction and barrier diodes; Solar cells and arrays; Photoelectric conversion; solar cells and arrays

References

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      • D.L. Pulfrey . A minority carrier MIS solar cell. Solid-State Electron , 455 - 457
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      • Green, M.A., Godfrey, R.B., Davies, L.W.: `Large open-circuit photovoltages in silicon minority carrier m.i.s. solar cells', Proceedings of the 12th IEEE Photo. Spec. Conference, 1976, p. 896–899.
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      • D.R. Lillington , W.G. Townsend . Effects of inter-facial oxide layers on the performance of silicon schottky-barrier solar cells. Appl. Phys. Lett. , 97 - 98
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