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Observation of multi-state negative differential conductivity in periodic delta-doped superlattice

Observation of multi-state negative differential conductivity in periodic delta-doped superlattice

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IEE Proceedings G (Circuits, Devices and Systems) — Recommend this title to your library

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A novel multistate S-shaped negative differential conductivity (NDC) δ-doped superlattice structure with long period (Zp = 600 Å) is observed and investigated. The multi-state NDC originates from a sequential sub-avalanche multiplication in the superlattice periods. Three different superlattices, i.e. one-period, three-period, and nine-period δ(n+)-i-δ(p+)-i (δ-doped superlattices, were used. A different number of S-shaped NDCs are exhibited in each superlattice. An interesting hysteresis phenomenon was also apparent in the nine-period superlattice structure. It was attributed to the existence of heavy ‘trapped’ holes.

References

    1. 1)
      • W.C. Liu , Y.H. Wang , C.Y. Chang , S.A. Liao . GaAs n+ i p+ i n+ barrier transistor with ultra-thin p+ AlGaAs base prepared by molecular beam epitaxy. IEE Proc. I , 47 - 48
    2. 2)
      • E.F. Schubert , J.E. Cunningham , W.T. Tsang , T.H. Chiu . Delta-doped ohmic contacts to n-GaAs. Appl. Phys. Lett. , 292 - 294
    3. 3)
      • C.E.C. Wood , G.M. Metze , J.D. Berry , L.F. Eastman . Complex free-carrier profile synthesis by “atomic-plane” doping of MBE. J. Appl. Phys. , 383 - 387
    4. 4)
      • E.F. Schubert , B. Ullrich , T.D. Harris , J.E. Cunningham . Quantum-confined interband absorption in GaAs sawtooth-doping superlattices. Phys. Rev. , 8305 - 8308
    5. 5)
      • E.F. Schubert , A. Fischer , Y. Horikoshi , K. Ploog . Radiative electron–hole recombination in a new sawtooth semiconductor superlattice grown by molecular-beam epitaxy. Phys. Rev. , 1085 - 1089
    6. 6)
      • E.F. Schubert , J.E. Cunningham , W.T. Tsang . Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T = 300 K. Solid State Commun. , 591 - 594
    7. 7)
      • S. Sasa , S. Muto , K. Kondo , H. Ishikawa , S. Hiyamizu . Si atomic-planar-doping in GaAs made by molecular beam epitaxy. Jpn. J. Appl. Phys. , L602 - L604
    8. 8)
      • L. Esaki , R. Tsu . Superlattice and negative differential conductivity in semiconductors. IBM J. Rev. Dev. , 61 - 65
    9. 9)
      • Y.H. Wang , W.C. Liu , C.Y. Chang , S.A. Liao . Surface morphologies of GaAs layers grown by arsenic-pressure-controlled molecular beam epitaxy. J. Vac. Sci. Technol. , 1 , 30 - 36
    10. 10)
      • E.F. Schubert , J.E. Cunningham , W.T. Tsang . Perpendicular electronic transport in doping superlattice. Appl. Phys. Lett. , 817 - 819
    11. 11)
      • K. Ploog , M. Hauser , A. Fischer . Fundamental studies and device application of δ-doping in GaAs layers and AlxGa1-xAs/GaAs heterostructures. Appl. Phys. , 233 - 244
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