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Electrical characterisation of the insulating property of Ta2O5 in AI–Ta2O5–SiO2–Si capacitors by a low-frequency C/V technique

Electrical characterisation of the insulating property of Ta2O5 in AI–Ta2O5–SiO2–Si capacitors by a low-frequency C/V technique

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The measurement of equivalent low-frequency capacitance is used as an efficient method to monitor the insulating properties of Ta2O5 in Al–Ta2O5–SiO2–Si (MTOS) structures. It is found however, that MTOS devices having normal high-frequency C/V characteristics can have significantly different behaviour at low frequencies. A technique is proposed in this work that enables the quality of the Ta2O5 preparation to be determined. Examples showing the importance of the measurement of the equivalent lowfrequency capacitance are also given.

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