Equivalent circuit model of a stacked inductor for high-Q on-chip RF applications

C.C. Lim; K.S. Yeo; K.W. Chew; C.Y. Tan; M.A. Do; J.G. Ma; L. Chan

Equivalent circuit model of a stacked inductor for high-Q on-chip RF applications

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Equivalent circuit model of a stacked inductor for high-Q on-chip RF applications

Author(s): C.C. Lim ; K.S. Yeo ; K.W. Chew ; C.Y. Tan ; M.A. Do ; J.G. Ma ; L. Chan
DOI: 10.1049/ip-cds:20060099

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Author(s): C.C. Lim ^{1, 2} ; K.S. Yeo ¹ ; K.W. Chew ^{1, 2} ; C.Y. Tan ¹ ; M.A. Do ¹ ; J.G. Ma ¹ ; L. Chan ²
- Affiliations: 1: Division of Circuits and Systems, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore
  2: Division of Circuits and Systems, School of Electrical and Electronic Engineering, Chartered Semiconductor Manufacturing Ltd, Singapore
Source: Volume 153, Issue 6, December 2006, p. 525 – 532
DOI: 10.1049/ip-cds:20060099 , Print ISSN 1350-2409, Online ISSN 1359-7000

Published

A novel design for a stacked inductor using RLC elements is presented. The proposed model used to predict the stacked inductor is based on a 4-port circuit design with semi-empirical derivation. The modified R_S formulas are implemented accurately to predict the series resistance of the stacked inductor. The verification has been carried out using a mature 0.18 μm process to fabricate stacked inductor with various sizes and types. All the measured data are extracted from a silicon device based on a physical layered test system (PLTS). The predicted and measured S-parameter results show excellent correlation in terms of performance for frequencies up to 15 GHz. A high-Q on-chip active inductor is demonstrated using a multiple turns stacked inductor.

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Equivalent circuit model of a stacked inductor for high-Q on-chip RF applications

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