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Experimental validation of the ‘FLoating Islands’ concept: 95 V breakdown voltage vertical FLIDiode

Experimental validation of the ‘FLoating Islands’ concept: 95 V breakdown voltage vertical FLIDiode

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The present 14 V automotive electrical system will soon become 42 V. For these future automotive applications, development of 80 V power MOSFETs exhibiting low on-resistance is desired. The ‘FLoating Island’ MOSFET (FLIMOSFET) is one of the new candidates to break the conventional silicon limit, which is the ‘specific on-resistance/breakdown voltage’ trade-off limit of power MOSFETs. In the paper, the ‘FLoating Island’ concept has been implemented on silicon for the first time: vertical FLoating Island diodes (FLIDiodes) and MOSFETs (FLIMOSFETs) have been fabricated, using a two step epitaxy process. Experimental results confirm the predictive simulations: the FLIDiode exhibits an important breakdown voltage (above 85 V) with an N− epitaxial layer doping concentration (1.1×1016 cm−3) usually dedicated to 50 V devices. The FLIMOSFET exhibits a lower breakdown voltage (73 V) but also an improved specific on-resistance compared to conventional VDMOSFET (33% reduction of the specific on-resistance for the same breakdown voltage). These measurements validate the ‘FLoating Island’ concept and the efficiency of the original edge cell that is used in the FLIMOS technology.

Inspec keywords: automotive electronics; power semiconductor diodes; semiconductor device breakdown; epitaxial layers; semiconductor doping; power MOSFET

Other keywords: fLoating island diodes; automotive electrical system; floating island MOSFET; improved specific on-resistance; breakdown voltage; FLIMOS technology; epitaxial layer doping; epitaxy process; FLIDiodes; 95 V; vertical FLIDiode; power MOSFET; FLIMOSFET

Subjects: Power semiconductor devices; Insulated gate field effect transistors; Junction and barrier diodes

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