InGaN/GaN blue light-emitting diodes (LEDs) with self-assembled quantum dot (SAQD) active layers were successfully fabricated using an interrupted growth method in metal-organic chemical vapour deposition (MOCVD). Nanoscale QDs have been formed successfully embedded in quantum wells (QWs) with a typical 3 nm height and 10 nm lateral dimension. A huge 68.4 meV blue shift in electroluminescence (EL) peak position was found as the injection current was increased from 3 to 50 mA for the SAQD LED. The large EL blue shift reveals that deep localisation of exitons (or carriers) originating from QDs strengthens the band-filling effect as the injection current increases.
Inspec keywords: self-assembly; III-V semiconductors; light emitting diodes; MOCVD coatings; quantum wells; nanoelectronics; wide band gap semiconductors; gallium compounds; quantum dots; electroluminescence; indium compounds
Other keywords:
Subjects: Chemical vapour deposition; Nanometre-scale semiconductor fabrication technology; Light emitting diodes
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