Nitride-based light-emitting diodes with InGaN/GaN SAQD active layers
Nitride-based light-emitting diodes with InGaN/GaN SAQD active layers
- Author(s): L.W. Ji ; Y.K. Su ; S.J. Chang ; S.C. Hung ; C.S. Chang ; L.W. Wu
- DOI: 10.1049/ip-cds:20040997
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- Author(s): L.W. Ji 1 ; Y.K. Su 1 ; S.J. Chang 1 ; S.C. Hung 1 ; C.S. Chang 1 ; L.W. Wu 1
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View affiliations
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Affiliations:
1: Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan
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Affiliations:
1: Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan
- Source:
Volume 151, Issue 5,
October 2004,
p.
486 – 488
DOI: 10.1049/ip-cds:20040997 , Print ISSN 1350-2409, Online ISSN 1359-7000
InGaN/GaN blue light-emitting diodes (LEDs) with self-assembled quantum dot (SAQD) active layers were successfully fabricated using an interrupted growth method in metal-organic chemical vapour deposition (MOCVD). Nanoscale QDs have been formed successfully embedded in quantum wells (QWs) with a typical 3 nm height and 10 nm lateral dimension. A huge 68.4 meV blue shift in electroluminescence (EL) peak position was found as the injection current was increased from 3 to 50 mA for the SAQD LED. The large EL blue shift reveals that deep localisation of exitons (or carriers) originating from QDs strengthens the band-filling effect as the injection current increases.
Inspec keywords: self-assembly; III-V semiconductors; light emitting diodes; MOCVD coatings; quantum wells; nanoelectronics; wide band gap semiconductors; gallium compounds; quantum dots; electroluminescence; indium compounds
Other keywords:
Subjects: Chemical vapour deposition; Nanometre-scale semiconductor fabrication technology; Light emitting diodes
References
-
-
1)
- F.A. Ponce , D.P. Bour . Nitride-based semiconductors for blue and green light-emitting devices. Nature , 351 - 359
-
2)
- H.W. Shim , E.K. Suh , C.H. Hong , Y.W. Kim , H.J. Lee . Effect of well profile on optical and structural properties in InGaN/GaN quantum wells and light emitting diodes. Phys. Status Solidi A , 62 - 66
-
3)
- L.W. Wu , S.J. Chang , T.C. Wen , Y.K. Su , W.C. Lai , C.H. Kuo , C.H. Chen , J.K. Sheu . Influence of Si-doping on the characteristics of InGaN-GaN multiple quantum-well blue light emitting diodes. IEEE J. Quantum Electron , 5 , 446 - 450
-
4)
- S. Nakamura . The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes. Science , 956 - 961
-
5)
- Y. Narukawa , Y. Kawakami , M. Funato , S. Fujita , S. Fujita , S. Nakamura . Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm. Appl. Phys. Lett. , 981 - 983
-
6)
- S. Nakamura , T. Mukai , M. Senoh . J. Appl. Phys.. J. Appl. Phys.
-
7)
- Y.J. Ding , D.C. Reynolds , S.J. Lee , J.B. Khurgin , W.S. Rabinovich , D.S. Katzer . Evidence for strong spatially localized band-filling effects at interface islands. Appl. Phys. Lett. , 2581 - 2583
-
8)
- W.R. Tribe , M.J. Steer , D.J. Mowbray , M.S. Skolnick , A.N. Forshaw , J.S. Roberts , G. Hill , M.A. Pate , C.R. Whitehouse , G.M. Williams . Emission mechanisms and band filling effects in GaAs-AlGaAs V-groove quantum wires. Appl. Phys. Lett. , 993 - 995
-
9)
- S.J. Chang , W.C. Lai , Y.K. Su , J.F. Chen , C.H. Liu , U.H. Liaw . InGaN-GaN multiquantum-well blue and green light-emitting diodes. IEEE J. Sel. Top. Quantum , 2 , 278 - 283
-
10)
- H. Gotoh , H. Ando , H. Kanbe . Excitonic optical properties in semiconductor thin quantum boxes of intermediate regime between zero and two dimensions. Appl. Phys. Lett. , 15 , 2132 - 2134
-
11)
- P. Ramvall , P. Riblet , S. Nomura , Y. Aoyagi , S. Tanaka . Optical properties of GaN quantum dots. J. Appl. Phys. , 8 , 3883 - 3890
-
12)
- C. Winnewisser , J. Schneider , M. Börsch , H.W. Rotter . In situ temperature measurements via ruby R lines of sapphire substrate based InGaN light emitting diodes during operation. J. Appl. Phys. , 3091 - 3094
-
13)
- B. Damilano , N. Grandjean , S. Dalmasso , J. Massies . Room-temperature blue-green emission from InGaN/GaN quantum dots made by strain-induced islanding growth. Appl. Phys. Lett. , 24 , 3751 - 3753
-
14)
- K. Tachibana , T. Someya , Y. Arakawa . Growth of InGaN self-assembled quantum dots and their application to lasers. IEEE J. Sel. Top. Quantum Electron. , 3 , 475 - 481
-
15)
- D. Leonard , M. Krinshnamurthy , C.M. Reaves , S.P. Denbaars , P.M. Petroff . Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces. Appl. Phys. Lett. , 3203 - 3205
-
16)
- S.J. Chang , C.H. Kuo , Y.K. Su , L.W. Wu , J.K. Sheu , T.C. Wen , W.C. Lai , J.F. Chen , J.M. Tsai . 400 nm InGaN–GaN and InGaN–AlGaN multiquantum well light-emitting diodes. IEEE J. Select. Topics Quantum Electron. , 744 - 748
-
17)
- Y.K. Su , S.J. Chang , C.H. Ko , J.F. Chen , W.H. Lan , W.J. Lin , Y.T. Cherng , J. Webb . InGaN/GaN light emitting diodes with a p-down structure. IEEE Trans. Electron Devices. , 8 , 1361 - 1366
-
18)
- S. Nakamura , K. Kitamura , H. Umeya , A. Jia , M. Kobayashi , A. Yoshikawa , M. Shimotomai , Y. Kato , K. Takahashi . Bright electroluminescence from CdS quantum dot LED structures. Electron. Lett. , 25 , 2435 - 2436
-
19)
- L.W. Ji , Y.K. Su , S.J. Chang , L.W. Wu , T.H. Fang , J.F. Chen , T.Y. Tsai , Q.K. Xue , S.C. Chen . Growth of nanoscale InGaN self-assembled quantum dots. J. Cryst. Growth , 144 - 148
-
20)
- C. Adelmann , J. Simon , G. Feuillet , N.T. Pelekanos , B. Daudin . Self-assembled InGaN quantum dots grown by molecular-beam epitaxy. Appl. Phys. Lett. , 12 , 1570 - 1572
-
21)
- K. Tachibana , T. Someya , Y. Arakawa . Nanometer-scale InGaN self-assembled quantum dots grown by metalorganic chemical vapor deposition. Appl. Phys. Lett. , 3 , 383 - 385
-
22)
- K. Tachibana , T. Someya , Y. Arakawa . Room-temperature lasing oscillation in an InGaN self-assembled quantum dot laser. Appl. Phys. Lett. , 17 , 2605 - 2607
-
23)
- I. Akasaki , H. Amano . Progress and prospect of group-III nitride semiconductors. J. Cryst. Growth , 29 - 36
-
1)