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Nitride-based light-emitting diodes with InGaN/GaN SAQD active layers

Nitride-based light-emitting diodes with InGaN/GaN SAQD active layers

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InGaN/GaN blue light-emitting diodes (LEDs) with self-assembled quantum dot (SAQD) active layers were successfully fabricated using an interrupted growth method in metal-organic chemical vapour deposition (MOCVD). Nanoscale QDs have been formed successfully embedded in quantum wells (QWs) with a typical 3 nm height and 10 nm lateral dimension. A huge 68.4 meV blue shift in electroluminescence (EL) peak position was found as the injection current was increased from 3 to 50 mA for the SAQD LED. The large EL blue shift reveals that deep localisation of exitons (or carriers) originating from QDs strengthens the band-filling effect as the injection current increases.

References

    1. 1)
    2. 2)
      • H.W. Shim , E.K. Suh , C.H. Hong , Y.W. Kim , H.J. Lee . Effect of well profile on optical and structural properties in InGaN/GaN quantum wells and light emitting diodes. Phys. Status Solidi A , 62 - 66
    3. 3)
    4. 4)
    5. 5)
    6. 6)
    7. 7)
    8. 8)
    9. 9)
      • S.J. Chang , W.C. Lai , Y.K. Su , J.F. Chen , C.H. Liu , U.H. Liaw . InGaN-GaN multiquantum-well blue and green light-emitting diodes. IEEE J. Sel. Top. Quantum , 2 , 278 - 283
    10. 10)
    11. 11)
    12. 12)
    13. 13)
    14. 14)
    15. 15)
    16. 16)
    17. 17)
    18. 18)
    19. 19)
    20. 20)
    21. 21)
    22. 22)
    23. 23)
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