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Advanced electrothermal Spice modelling of large power IGBTs

Advanced electrothermal Spice modelling of large power IGBTs

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A novel IGBT electrothermal model is implemented for the first time in PSpice for the simulation of steady state and transient temperature dependent IGBT operation including self-heating and latchup. A thermal circuit representing the characteristics of the IGBT package is developed and validated against a finite element model and experimental results. A novel electrical IGBT model based on the Kraus model is developed to account for the electrical impact of instantaneous junction temperature variations owing to self-heating. The resulting electrothermal model is validated against experimental DC and transient FBSOA measurements.

Inspec keywords: insulated gate bipolar transistors; power transistors

Other keywords: cell geometry; 1200 V; IGBT3; short-circuit current; maximum junction temperature; IGBT chips; trench field stop technology; 1700 V; ultra thin wafer technology; on-state loss; 70 micron; pitch; 175 C; 600 V

Subjects: Power semiconductor devices; Insulated gate field effect transistors; Bipolar transistors

References

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