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Low-frequency noise and radiation response of buried oxides in SOI nMOS transistors

Low-frequency noise and radiation response of buried oxides in SOI nMOS transistors

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The back channel low-frequency noise of 1.2 μm×2.3 μm SOI nMOS transistors with a buried oxide thickness of 170 nm was measured as a function of frequency, back gate bias Vbg and temperature T. For a temperature range of 85≤T≤320 K, noise measurements were performed at frequencies of 0.3≤f≤1 kHz with top gate bias Vbg=0 V and Vbg−Vbg−th=4 V, where Vbg−th is the back gate threshold voltage. The temperature and frequency dependences of the 1/f noise of back channel SOI nMOS transistors show thermally activated charge exchange between the Si channel and defects in the buried oxide. Comparison is made with the Dutta and Horn model of 1/f noise. Devices on one particular wafer appear to show a mixture of 1/f noise and noise with a higher frequency exponent at low temperatures. Little change is observed in back gate noise with irradiation for the devices and irradiation conditions studied. This is probably due to large preirradiation defect densities in the buried oxides.

Inspec keywords: MOSFET; radiation effects; semiconductor device noise; 1/f noise; noise measurement; silicon-on-insulator; semiconductor device models

Other keywords: preirradiation defect density; SOI nMOS transistors; thermally activated charge exchange; back gate threshold voltage; back channel low-frequency noise; 0.3 to 1 kHz; back gate noise; noise measurements; low frequency noise; frequency dependence; Si channel; temperature dependence; 170 nm; 85 to 320 K; 1/f noise; buried oxides; radiation response

Subjects: Semiconductor device modelling, equivalent circuits, design and testing; Radiation effects (semiconductor technology); Metal-insulator-semiconductor structures; Insulated gate field effect transistors

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