1/f noise in hydrogenated amorphous silicon–germanium alloys

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1/f noise in hydrogenated amorphous silicon–germanium alloys

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Measurements were made of conductance noise of a-Si:H and a-Si1−xGex:H in two different geometries: one where the current flow is transverse to the surface and the other where it is longitudinal to the surface. Because of the large change in sample resistance between the two geometries, it was not possible to measure both geometries at the same temperature. For both geometries, alloying with up to 40% Ge reduces the noise magnitude by several orders of magnitude over that found in a-Si:H. The decrease is incompatible with several popular noise models. Extrapolating the temperature trends for each geometry shows that it is possible that the noise observed in the transverse samples has the same origin as the higher frequency part of the double power law spectra observed in the longitudinal samples.

Inspec keywords: semiconductor device noise; 1/f noise; semiconductor materials; solar cells; Ge-Si alloys

Other keywords: temperature trends; a-Si1-xGex:H; longitudinal current flow; double power law spectra; noise magnitude; 1/f noise; Si1-xGex:H; sample resistance; transverse current flow; Si:H; a-Si:H; conductance noise

Subjects: Noise processes and phenomena in electronic transport; Photoelectric conversion; solar cells and arrays; Other semiconductor materials; Solar cells and arrays

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