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Radiation-induced changes in thin film structures

Radiation-induced changes in thin film structures

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Optical, electrical and structural properties of metal oxide thin films of tellurium dioxide (TeO2), indium oxide (In2O3) and silicon monoxide (SiO) and their mixtures were studied in terms of gamma radiation influence. These films were prepared using the thermal vacuum evaporation technique. 60Co and 137Cs sources were used to expose the samples to γ-radiation. It was found that the optical band gap values decreased with increasing radiation dose. The radiation induced changes in the electrical properties of these films. Devices with resistor-type structures and p-n junctions were studied. Irradiation resulted in the degradation of the device performance, e.g. current–voltage characteristics of these devices experienced significant alterations. It was observed that values of current were increased with increasing radiation dose. The response of these devices to radiation was found to be composition-dependent. Radiation-induced changes in the structure and surface morphology of In2O3/SiO films were examined by scanning electron microscopy and X-ray diffraction. The irradiation of these thin films with a dose of 8160 μSv led to a change in their phase from amorphous to partially crystallised.

Inspec keywords: carrier mobility; X-ray diffraction; indium compounds; Hall effect; vacuum deposited coatings; p-n junctions; semiconductor thin films; optical constants; surface morphology; silicon compounds; thin film resistors; insulating thin films; visible spectra; ultraviolet spectra; tellurium compounds; gamma-ray effects; scanning electron microscopy; crystallisation

Other keywords: TeO2-In2O3; electrical properties; thin film structures; optical properties; In2O3-SiO; In2O3; 370 kBq; p-n junctions; SiO; disc-type 137Cs radiation source; optical band gap; scanning electron microscopy; composition-dependent response; X-ray diffraction; TeO2; radiation dose; 0 to 36 Gy; partial crystallisation; 0 to 8160 muSv; device performance degradation; resistor-type structures; gamma radiation; surface morphology; In2O3SiO-Si; thermal vacuum evaporation; structural properties; current-voltage characteristics; radiation-induced changes

Subjects: Resistors; Galvanomagnetic and other magnetotransport effects (semiconductors/insulators); Electrical properties of other inorganic semiconductors (thin films, low-dimensional and nanoscale structures); Vacuum deposition; Thin film growth, structure, and epitaxy; Electrical properties of insulators (thin films, low-dimensional and nanoscale structures); Radiation effects (semiconductor technology); Vacuum deposition; Oxide and ferrite semiconductors; Visible and ultraviolet spectra of other nonmetals; Gamma ray effects; Semiconductor junctions; Optical properties of amorphous and glassy semiconductors and insulators (thin films, low-dimensional and nanoscale structures); Electrical properties of amorphous and glassy semiconductors (thin films, low-dimensional and nanoscale structures); Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Optical constants and parameters (condensed matter); Optical properties of other inorganic semiconductors and insulators (thin films, low-dimensional and nanoscale structures)

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