Your browser does not support JavaScript!

Radiation-induced changes in thin film structures

Radiation-induced changes in thin film structures

For access to this article, please select a purchase option:

Buy article PDF
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Your details
Why are you recommending this title?
Select reason:
IEE Proceedings - Circuits, Devices and Systems — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

Optical, electrical and structural properties of metal oxide thin films of tellurium dioxide (TeO2), indium oxide (In2O3) and silicon monoxide (SiO) and their mixtures were studied in terms of gamma radiation influence. These films were prepared using the thermal vacuum evaporation technique. 60Co and 137Cs sources were used to expose the samples to γ-radiation. It was found that the optical band gap values decreased with increasing radiation dose. The radiation induced changes in the electrical properties of these films. Devices with resistor-type structures and p-n junctions were studied. Irradiation resulted in the degradation of the device performance, e.g. current–voltage characteristics of these devices experienced significant alterations. It was observed that values of current were increased with increasing radiation dose. The response of these devices to radiation was found to be composition-dependent. Radiation-induced changes in the structure and surface morphology of In2O3/SiO films were examined by scanning electron microscopy and X-ray diffraction. The irradiation of these thin films with a dose of 8160 μSv led to a change in their phase from amorphous to partially crystallised.

Inspec keywords: carrier mobility; X-ray diffraction; indium compounds; Hall effect; vacuum deposited coatings; p-n junctions; semiconductor thin films; optical constants; surface morphology; silicon compounds; thin film resistors; insulating thin films; visible spectra; ultraviolet spectra; tellurium compounds; gamma-ray effects; scanning electron microscopy; crystallisation

Other keywords: TeO2-In2O3; electrical properties; thin film structures; optical properties; In2O3-SiO; In2O3; 370 kBq; p-n junctions; SiO; disc-type 137Cs radiation source; optical band gap; scanning electron microscopy; composition-dependent response; X-ray diffraction; TeO2; radiation dose; 0 to 36 Gy; partial crystallisation; 0 to 8160 muSv; device performance degradation; resistor-type structures; gamma radiation; surface morphology; In2O3SiO-Si; thermal vacuum evaporation; structural properties; current-voltage characteristics; radiation-induced changes

Subjects: Resistors; Galvanomagnetic and other magnetotransport effects (semiconductors/insulators); Electrical properties of other inorganic semiconductors (thin films/low-dimensional structures); Vacuum deposition; Thin film growth, structure, and epitaxy; Electrical properties of insulators (thin films/low-dimensional structures); Radiation effects (semiconductor technology); Vacuum deposition; Oxide and ferrite semiconductors; Visible and ultraviolet spectra of other nonmetals; Gamma ray effects; Semiconductor junctions; Optical properties of amorphous and glassy semiconductors and insulators (thin films/low-dimensional structures); Electrical properties of amorphous and glassy semiconductors (thin films/low-dimensional structures); Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Optical constants and parameters (condensed matter); Optical properties of other inorganic semiconductors and insulators (thin films/low-dimensional structures)


    1. 1)
    2. 2)
      • V.E. Heinrich , P.A. Cox . (1994) The surface science of metal oxides.
    3. 3)
    4. 4)
      • Y.S. Horowitz . Theory of thermoluminescence gamma dose response: The unified interaction model. Nucl. Instrum. Methods B, Phys. Res. , 68 - 84
    5. 5)
      • R.y. Zhu . Radiation damage in scintillating crystals. Nucl. Instrum. Methods A, Phys. Res. , 297 - 311
    6. 6)
    7. 7)
      • N.F. Mott , E.A. Davis . (1979) Electronic process in non-crystalline materials.
    8. 8)
      • V. Mucka , J. Podlaha , R. Silber . NiO-ThO2 mixed catalysts in hydrogen peroxide decomposition and influence of ionizing radiation. Radiat. Phys. Chem. , 467 - 475
    9. 9)
      • L. Esaki , Y. Miyahara . A new device using the tunneling process in narrow p-n junctions. Solid-State Electron. , 13 - 14
    10. 10)
    11. 11)
    12. 12)
    13. 13)
      • K.L. Chopra . (1979) Thin film phenomena.
    14. 14)
    15. 15)
    16. 16)
      • S.O. Kasap . (2008) Principles of electronic materials and devices.
    17. 17)
      • M.V. Kurik . Urbach rule. Phys. Status Solidi , 9 - 45
    18. 18)
    19. 19)
    20. 20)
    21. 21)
      • K. Arshak , C.A. Hogarth , M. Ilyas . A study of electron spin resonance and optical absorption edge in amorphous mixed films of SiO and In2O3. J. Mater. Sci. Lett. , 1035 - 1038
    22. 22)
    23. 23)
      • L.P. Hunter , L.P. Hunter . (1970) Rectification, diodes, and photocells, Handbook of semiconductor electronics.
    24. 24)
    25. 25)
      • J.H. Park , P.M. Woodward . Synthesis, structure and optical properties of two new perovskites: Ba2Bi2/3TeO6 and Ba3Bi2TeO9. Int. J. Inorg. Mater. , 153 - 166
    26. 26)
      • O.I. Shpotyuk . Amorphous chalcogenide semiconductors for dosimetry of high-energy ionizing radiation. Radiat. Phys. Chem. , 1279 - 1282

Related content

This is a required field
Please enter a valid email address