Stability of microcrystalline silicon for thin film solar cell applications
Stability of microcrystalline silicon for thin film solar cell applications
- Author(s): F. Finger ; R. Carius ; T. Dylla ; S. Klein ; S. Okur ; M. Günes
- DOI: 10.1049/ip-cds:20030636
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- Author(s): F. Finger 1 ; R. Carius 1 ; T. Dylla 1 ; S. Klein 1 ; S. Okur 2 ; M. Günes 2
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View affiliations
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Affiliations:
1: Institute of Photovoltaics, Jülich, Germany
2: Department of Physics, Izmir Institute of Technology, Urla, Turkey
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Affiliations:
1: Institute of Photovoltaics, Jülich, Germany
- Source:
Volume 150, Issue 4,
August 2003,
p.
300 – 308
DOI: 10.1049/ip-cds:20030636 , Print ISSN 1350-2409, Online ISSN 1359-7000
The development of microcrystalline silicon (μc-Si:H) for solar cells has made good progress with efficiencies better than those of amorphous silicon (a-Si:H) devices. Of particular interest is the absence of light-induced degradation in highly crystalline μc-Si:H. However, the highest efficiencies are obtained with material which may still include a-Si:H regions and light-induced changes may be expected in such material. On the other hand, material of high crystallinity is susceptible to in-diffusion of atmospheric gases which, through adsorption or oxidation, affect the electronic transport. Investigations are presented of such effects concerning the stability of μc-Si:H films and solar cells prepared by plasma-enhanced chemical vapour deposition and hot wire chemical vapour deposition.
Inspec keywords: chemical vapour deposition; elemental semiconductors; plasma CVD; silicon; solar cells; oxidation
Other keywords:
Subjects: Surface treatment and degradation in semiconductor technology; Chemical vapour deposition; Surface treatment (semiconductor technology); Photoelectric conversion; solar cells and arrays; Solar cells and arrays; Chemical vapour deposition
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