Thin film polycrystalline silicon solar cell on ceramics with a seeding layer formed via aluminium-induced crystallisation of amorphous silicon
Thin film polycrystalline silicon solar cell on ceramics with a seeding layer formed via aluminium-induced crystallisation of amorphous silicon
- Author(s): C. Ornaghi ; M. Stöger ; G. Beaucarne ; J. Poortmans ; P. Schattschneider
- DOI: 10.1049/ip-cds:20030630
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- Author(s): C. Ornaghi 1 ; M. Stöger 2 ; G. Beaucarne 1 ; J. Poortmans 1 ; P. Schattschneider 2
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View affiliations
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Affiliations:
1: IMEC vzw, Leuven, Belgium
2: Technische Universität Wien, Wien, Austria
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Affiliations:
1: IMEC vzw, Leuven, Belgium
- Source:
Volume 150, Issue 4,
August 2003,
p.
287 – 292
DOI: 10.1049/ip-cds:20030630 , Print ISSN 1350-2409, Online ISSN 1359-7000
Thin film polycrystalline silicon solar cells on foreign substrates are viewed as one of the most promising approaches to cost reduction in photovoltaics. To enhance the quality of the film, the use of ‘seeding layers’ prior to deposition of active material is being investigated. It has been shown that a phenomenon suitable to create such a seeding layer is the aluminium-induced crystallisation of amorphous silicon. Previous work mainly considered glass as the substrate of choice, thereby introducing limitations on the deposition temperature. Results concerning the application of such a technique to ceramic substrates (allowing the use of high-temperature CVD) are described. Also, the first reported results of a solar cell made in silicon deposited on these seeding layers are presented.
Inspec keywords: aluminium; amorphous semiconductors; thin film devices; semiconductor thin films; elemental semiconductors; ceramics; substrates; crystallisation; silicon; solar cells; chemical vapour deposition; semiconductor growth
Other keywords:
Subjects: Solar cells and arrays; Thin film growth, structure, and epitaxy; Chemical vapour deposition; Photoelectric conversion; solar cells and arrays; Semiconductor technology; Chemical vapour deposition
References
-
-
1)
- J. McCann , K. Catchpole , K.J. Weber , A.W. Blaker . A review of thin-film crystalline silicon for solar cell applications. Part 1: Native substrates. Sol. Energy Mater. Sol. Cells , 135 - 171
-
2)
- L. Hultman , A. Robertsson , H.T.G. Hentzell , I. Engström , P.A. Psaras . Crystallization of amorphous silicon during thin-film gold reaction. J. Appl. Phys. , 9 , 3647 - 3665
-
3)
- S.F. Gong , H.T.G. Hentzell , A. Robertsson , L. Hultman , S.E. Hornstrom , G. Radnoczi . Al-doped and Sb-doped polycrystalline silicon obtained by means of metal-induced crystallization. J. Appl. Phys. , 9 , 3726 - 3732
-
4)
- R. Brendel , R.B. Bergmann , P. Lolgen , M. Wolf . Ultrathin crystalline silicon solar cells on glass substrates. Appl. Phys. Lett. , 3 , 390 - 392
-
5)
- S.W. Lee , S.K. Joo . Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallization. IEEE Electron Device Lett. , 4 , 160 - 162
-
6)
- O. Nast , S.R. Wenham . Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by aluminum-induced crystallization. J. Appl. Phys. , 1 , 124 - 132
-
7)
- O. Nast , A.J. Hartmann . Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon. J. Appl. Phys. , 2 , 716 - 724
-
8)
- A. Hiraki . A model of the mechanism of room temperature interfacial intermixing reaction in various metal-semiconductor couples: what triggers the reaction?. J. Electrochem. Soc. , 12 , 2662 - 2665
-
9)
- A. Nakamura , F. Emoto , E. Fujii , Y. Uemoto , A. Yamamoto , K. Senda , G. Kano . Recrystallization mechanism for solid phase growth of poly-Si films on quartz substrates. Jpn. J. Appl. Phys. 2, Lett. , 12 , L2408 - L2410
-
10)
- H. Jian-Guo , W. Zi-Qin . Temperature dependence on fractal formation in ion-implanted a-Ge/Au bilayer thin films. Phys. Rev. B , 2 , 1008 - 1012
-
11)
- C. Spinella , S. Lombardo , F. Priolo . Crystal grain nucleation in amorphous silicon. J. Appl. Phys. , 5383 - 5414
-
12)
- J.W. Mayer , S.S. Lau . (1990) Electronic materials science: for integrated circuits in Si and GaAs.
-
13)
- Y. Wakayama , T. Tagami , S.I. Tanaka . Formation of Si islands from amorphous thin films upon thermal annealing. J. Appl. Phys. , 12 , 8492 - 8494
-
14)
- O. Nast , S. Brehme , D.H. Neuhaus , S.R. Wenham . Polycrystalline silicon thin film on glass by aluminum-induced crystallization. IEEE Trans. Electron Devices , 10 , 2062 - 2068
-
15)
- G. Radnoczi , A. Robertsson , H.T.G. Hentzell , S.F. Gong , A. Hasan M. . Al induced crystallization of a-Si. J. Appl. Phys. , 9 , 6394 - 6399
-
16)
- Y.Z. Wang , S.J. Fonash , O.O. Awadelkarim , T. Gu . Crystallization of a-Si:H on glass for active layers in thin film transistors: effect of glass coating. J. Electrochem. Soc. , 1 , 299 - 305
-
17)
- S.I. Muramatsu , Y. Minagawa , F. Oka , T. Sasaki , Y. Yazawa . Thin-film c-Si solar cells prepared by metal-induced crystallization. Sol. Energy Mater. Sol. Cells , 275 - 281
-
18)
- Neuhaus, D.H., Bardos, R., Feitknecht, L., Puzzer, T., Keevers, M.J., Aberle, A.G.: `Minority carrier properties of single- and polycrystalline silicon films formed by aluminium-induced crystallisation', Proc. 28th IEEE Photovoltaic specialists conference, Sept. 2000, Anchorage, AK, USA.
-
19)
- P.I. Widenborg , A.G. Aberle . Surface morphology of poly-Si films made by aluminium-induced crystallisation on glass substrates. J. Cryst. Growth , 270 - 282
-
20)
- L.P.H. Jeurgens , W.G. Sloof , F.D. Tichelaar , E.J. Mittemeijer . Growth kinetics and mechanisms of aluminum-oxide films formed by thermal oxidation of aluminum. J. Appl. Phys. , 3 , 1649 - 1656
-
21)
- J.H. Kim , J.Y. Lee . Al-induced crystallization of an amorphous Si thin film in a polycrystalline Al/native SiO2/amorphous Si structure. Jpn. J. Appl. Phys. 1, Regul. Pap. Short Notes , 2052 - 2056
-
22)
- T. Matsui , M. Tsukiji , H. Saika , T. Toyama , H. Okamoto . Influence of substrate texture on microstructure and photovoltaic performances of thin film polycrystalline solar cells. J. Non-Cryst. Solids , 1152 - 1156
-
23)
- Gall, A., Sieber, I., Muske, M., Nast, O., Fuhs, W.: `Seeding layer for polycrystalline silicon thin film solar cells by aluminium-induced crystallisation of amorphous silicon', Proc. 17th European Photovoltaic Solar Energy Conf., October 2001, Munich, Germany.
-
24)
- A. Goetzberg , C. Hebling , H.W. Schock . Photovoltaic materials, history, status and outlook. Mater. Sci. Eng. Rep. , 1 - 46
-
25)
- Nast, O., Puzzer, T., Chou, C.T., Birkholz, M.: `Grain size and structure analysis of polycrystalline silicon on glass formed by aluminium-induced crystallisation for thin-film solar cells', Proc. 16th European Photovoltaic Solar Energy Conf., May 2000, Glasgow, UK.
-
26)
- E. Nygren , A.P. Pogany , K.T. Short , J.S. Williams , R.G. Elliman , J.M. Poate . Impurity-stimulated crystallization and diffusion in amorphous silicon. Appl. Phys. Lett. , 6 , 439 - 441
-
27)
- T.A. Witten , L.M. Sander . Diffusion-limited aggregation. Phys. Rev. B , 9 , 5686 - 5697
-
28)
- B.Y. Tsaur , G.W. Turner , J.C.C. Fan . Efficient Si solar cells by low-temperature solid-phase epitaxy. Appl. Phys. Lett. , 9 , 749 - 751
-
29)
- Y. Masaki , O. Toshihiro , H. Ogawa , D.I. Jones . Kinetics of solid phase interaction between Al and a-Si:H. J. Appl. Phys. , 9 , 5225 - 5231
-
30)
- K. Catchpole , J. McCann , K.J. Weber , A.W. Blaker . A review of thin-film crystalline silicon for solar cell applications. Part 2: Foreign substrates. Sol. Energy Mater. Sol. Cells , 173 - 215
-
31)
- V.W.C. Chan , P.C.H. Chan . An empirical model to determine the grain size of metal-induced lateral crystallized film. IEEE Trans. Electron Devices , 8 , 1399 - 1404
-
1)