Recombination in silicon thin-film solar cells: a study of electrically detected magnetic resonance

Author(s): K. Lips ; C. Boehme ; W. Fuhs
DOI: 10.1049/ip-cds:20030578

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Author(s): K. Lips ¹ ; C. Boehme ¹ ; W. Fuhs ¹
- Affiliations: 1: Hahn-Meitner-Institut, Berlin, Germany
Source: Volume 150, Issue 4, August 2003, p. 309 – 315
DOI: 10.1049/ip-cds:20030578 , Print ISSN 1350-2409, Online ISSN 1359-7000

A review of recombination in silicon thin-film solar cells studied by means of electrically detected magnetic resonance (EDMR) is presented. It is shown that the EDMR results in μc-Si:H p-i-n solar cells can be described by a simple diffusion model that was developed for crystalline silicon p-n junctions assuming that recombination is dominated by dangling bonds in the space charge region. The results are compared to a-Si:H p-i-n cells and discussed in a recombination model involving the excited states of charged dangling bonds.

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Recombination in silicon thin-film solar cells: a study of electrically detected magnetic resonance

Recombination in silicon thin-film solar cells: a study of electrically detected magnetic resonance

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