Recombination in silicon thin-film solar cells: a study of electrically detected magnetic resonance
Recombination in silicon thin-film solar cells: a study of electrically detected magnetic resonance
- Author(s): K. Lips ; C. Boehme ; W. Fuhs
- DOI: 10.1049/ip-cds:20030578
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- Author(s): K. Lips 1 ; C. Boehme 1 ; W. Fuhs 1
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View affiliations
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Affiliations:
1: Hahn-Meitner-Institut, Berlin, Germany
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Affiliations:
1: Hahn-Meitner-Institut, Berlin, Germany
- Source:
Volume 150, Issue 4,
August 2003,
p.
309 – 315
DOI: 10.1049/ip-cds:20030578 , Print ISSN 1350-2409, Online ISSN 1359-7000
A review of recombination in silicon thin-film solar cells studied by means of electrically detected magnetic resonance (EDMR) is presented. It is shown that the EDMR results in μc-Si:H p-i-n solar cells can be described by a simple diffusion model that was developed for crystalline silicon p-n junctions assuming that recombination is dominated by dangling bonds in the space charge region. The results are compared to a-Si:H p-i-n cells and discussed in a recombination model involving the excited states of charged dangling bonds.
Inspec keywords: thin film devices; semiconductor device models; silicon; solar cells; dangling bonds; space charge; electron-hole recombination; elemental semiconductors
Other keywords:
Subjects: Photoelectric conversion; solar cells and arrays; Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators); Solar cells and arrays; Semiconductor device modelling, equivalent circuits, design and testing
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