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High performance ferroelectric memory with grounded-plate PMOS-gate cell technology

High performance ferroelectric memory with grounded-plate PMOS-gate cell technology

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A new FRAM architecture utilising a grounded-plate PMOS-gate (GPPG) ferroelectric cell is proposed. A GPPG cell consists of a PMOS access transistor and a ferroelectric data storage capacitor. Its plate is grounded. The proposed architecture employs three novel methods for cell operation: a VDD-precharged bit-line, a negative-voltage word-line technique and negative-pulse restoration. Because this configuration does not need the plate control circuitry, it greatly increases the memory cell efficiency. In addition, unlike other reported common-plate cells, this scheme can supply a sufficient voltage of VDD to the ferroelectric capacitor while detecting and storing the polarisation on the cell. Thus, there is no restriction on low-voltage operation. Furthermore, by employing a compact column-path circuitry which only activates the required 8-bit data, this architecture minimises the current consumption of the memory array. A 2.5-V, 2-Mbit prototype chip has been developed with 0.5-μm CMOS technology, and the possibility of the realisation of GPPG cell architecture has been confirmed.


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