The performance of a GaAs semiconductor matrix pixel detector, designed for intrinsic digital radiography, is evaluated. Electrical characterisation of different pixels is realised and a new numerical model is indicated for the charge and the current due to electron/hole pairs generated by the ionising radiation. The model, taking into account trapping and generated carrier phenomena, allows the indirect evaluation of the charge collection efficiency through a preliminary determination of the real trap distribution and transport parameters depending on the electric field. The numerical simulations obtained, confirming the electrical behaviour, make a more accurate design of the electronic front-end possible.
Inspec keywords: radiography; numerical analysis; image sensors; gallium arsenide; semiconductor device models; X-ray detection; III-V semiconductors
Other keywords:
Subjects: Semiconductor device modelling, equivalent circuits, design and testing; X-ray and gamma-ray equipment; Numerical analysis; Image sensors
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