Advanced SPICE modelling of SiGe HBTs using VBIC model
Advanced SPICE modelling of SiGe HBTs using VBIC model
- Author(s): B. Senapati and C.K. Maiti
- DOI: 10.1049/ip-cds:20020352
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- Author(s): B. Senapati 1 and C.K. Maiti 1
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View affiliations
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Affiliations:
1: Department of Electronics & Electrical Communication Engineering, Indian Institute of Technology, Kharagpur, India
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Affiliations:
1: Department of Electronics & Electrical Communication Engineering, Indian Institute of Technology, Kharagpur, India
- Source:
Volume 149, Issue 2,
April 2002,
p.
129 – 135
DOI: 10.1049/ip-cds:20020352 , Print ISSN 1350-2409, Online ISSN 1359-7000
The vertical bipolar intercompany (VBIC) model has been applied to silicon–germanium heterojunction bipolar transistors (SiGe HBTs). The model includes the improved Early effect, quasi-saturation, substrate parasitic, avalanche multiplication, and self-heating. Several device parameters have been extracted from SiGe HBTs and implemented in the VBIC model. A comparison is made with the SPICE Gummel–Poon model. The usefulness and accuracy of the VBIC model for SiGe HBTs are demonstrated by way of comparison of simulated and measured room temperature device data.
Inspec keywords: semiconductor device breakdown; equivalent circuits; Ge-Si alloys; thermal resistance; semiconductor device models; heterojunction bipolar transistors; avalanche breakdown; SPICE
Other keywords:
Subjects: Semiconductor device modelling, equivalent circuits, design and testing; Bipolar transistors; Electronic engineering computing; Computer-aided circuit analysis and design
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