The vertical bipolar intercompany (VBIC) model has been applied to silicon–germanium heterojunction bipolar transistors (SiGe HBTs). The model includes the improved Early effect, quasi-saturation, substrate parasitic, avalanche multiplication, and self-heating. Several device parameters have been extracted from SiGe HBTs and implemented in the VBIC model. A comparison is made with the SPICE Gummel–Poon model. The usefulness and accuracy of the VBIC model for SiGe HBTs are demonstrated by way of comparison of simulated and measured room temperature device data.
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