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Optimum design of 1.4 kV non-punch-through trench IGBTs: the next generation of high-power switching devices

Optimum design of 1.4 kV non-punch-through trench IGBTs: the next generation of high-power switching devices

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The trench insulated gate bipolar transistor (IGBT) is widely regarded as a worthy replacement of DMOS IGBTs and GTO thyristors in a wide range of applications, from motor control (1.4 kV) to HVDC (6.5 kV). An optimum design of 1.4 kV NPT trench IGBTs using a new fully integrated optimisation system comprised of process and device simulators and an RSM optimiser is described. The use of this new TCAD system has contributed largely to realising devices with characteristics far superior to the previous DMOS generation of IGBTs. Full experimental results on 1.4 kV trench IGBTs are reported, which are in excellent agreement with the TCAD predictions.


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