Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Optimum design of 1.4 kV non-punch-through trench IGBTs: the next generation of high-power switching devices

Optimum design of 1.4 kV non-punch-through trench IGBTs: the next generation of high-power switching devices

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
IEE Proceedings - Circuits, Devices and Systems — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

The trench insulated gate bipolar transistor (IGBT) is widely regarded as a worthy replacement of DMOS IGBTs and GTO thyristors in a wide range of applications, from motor control (1.4 kV) to HVDC (6.5 kV). An optimum design of 1.4 kV NPT trench IGBTs using a new fully integrated optimisation system comprised of process and device simulators and an RSM optimiser is described. The use of this new TCAD system has contributed largely to realising devices with characteristics far superior to the previous DMOS generation of IGBTs. Full experimental results on 1.4 kV trench IGBTs are reported, which are in excellent agreement with the TCAD predictions.

References

    1. 1)
      • Harada, M., Minato, T., Takahashi, H., Nishihara, H., Inoue, K., Takata, I.: `600 V trench IGBT in comparison with planar IGBT', Proceedings of 6th ISPSD, 1994, p. 411–416.
    2. 2)
      • TMA-Avant, Medici, : `TSuprem4, Workbench user's manuals', 1997.
    3. 3)
      • Kitagawa, M., Omura, I., Hasegawa, S., Inoue, T., Nakagawa, A.: `A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor', IEDM Tech. Dig., 1993, p. 679–682.
    4. 4)
      • Udrea, F., Amaratunga, G.A.J.: `A unified analytical model for the carrier dynamicsin trench insulated gate bipolar transistors', Proceedings of 7th ISPSD, 1995, p. 190–195.
    5. 5)
      • D. Ueda , H. Takagi , G. Kono . A new vertical power MOSFET structure with extremely reduced on-resistance. IEEE Trans. Electron Devices , 2 - 6
    6. 6)
      • H.R. Chang , B.J. Baliga . 500-V n-channel insulated-gate bipolar transistor with a trench gatestructure. IEEE Trans. Electron Devices , 1824 - 1829
    7. 7)
      • Nitta, T., Uenishi, A., Minato, T., Kusunoki, S., Takahashi, T., Nakamura, H., Nakamura, K., Aono, S., Harada, M.: `A design concept for the low forward voltage drop 4500 V trench IGBT', Proceedings of 10th ISPSD, 1998, p. 43–46.
    8. 8)
      • F. Udrea , G.A.J. Amaratunga . Theoretical and numerical comparison betweentrench and DMOS technologies for insulated gate bipolar transistors. IEEE Trans. Electron Devices , 1356 - 1366
    9. 9)
      • Udrea, F., Chan, S.S.M., Thomson, J., Keller, S., Amaratunga, G.A.J., Millington, A., Waind, P.R., Creese, D.E.: `Development of the next generation of insulated gate bipolar transistorsbased on trench technology', Proceedings of European Solid State Device Research conference(ESSDERC), 1997, Stuttgart, p. 504–507.
    10. 10)
      • Laska, T., Pfirsch, P., Hirler, F., Niedermeyr, I., Schaffer, C., Schmidt, T.: `1200 V trench-IGBT study with squares short circuit SOA', Proceedings of 10th ISPSD, 1998, p. 433–436.
    11. 11)
      • Omura, I., Ogura, T., Sugiyama, K., Ohashi, H.: `Carrier injection enhancementeffect of high voltage MOS devices — device physics and design concept', Proceedings of 9th ISPSD, 1997, p. 217–220.
    12. 12)
      • Udrea, F., Waind, P.R., Thomson, J., Trajkovic, T., Chan, S.S.M., Huang, S., Amaratunga, G.A.J.: `1.2 kV 25 A, PT and NPT trench IGBTs with optimum forward characteristics', Proceedings of 11th ISPSD, 1999, p. 141–144.
    13. 13)
      • J. Kleijnen . (1987) Statistic tools for simulation practitioners.
http://iet.metastore.ingenta.com/content/journals/10.1049/ip-cds_20010165
Loading

Related content

content/journals/10.1049/ip-cds_20010165
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address