Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Effect of ionising radiation on the characteristics of a MOSFET

Effect of ionising radiation on the characteristics of a MOSFET

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
IEE Proceedings - Circuits, Devices and Systems — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© IEE
Published

The effect of radiation-induced changes on the characteristics of an n-channel MOSFET has been investigated theoretically. A one-dimensional semi-numerical model of the device has been developed which can estimate fairly accurate characteristics of the device under unirradiated and irradiated conditions. The effect of ionising radiation on the channel voltage and electric field profile in the channel has been estimated numerically for the first time. The present model enables one to determine the ID/VD and transfer characteristics of the device by considering the field dependent mobility of the surface channel in the irradiated condition. The model presented here can be used as a basic tool for analysing MOS transistors exposed to a nuclear environment.

Inspec keywords: MOSFET; radiation effects; semiconductor device models; carrier mobility

Other keywords: nuclear environment; irradiated conditions; one-dimensional model; ionising radiation effect; n-MOSFET characteristics; field dependent mobility; MOS transistors; surface channel; ID-VD characteristics; electric field profile; channel voltage; transfer characteristics; NMOSFET; 1D semi-numerical model; n-channel MOSFET; radiation-induced changes

Subjects: Radiation effects (semiconductor technology); Semiconductor device modelling, equivalent circuits, design and testing; Insulated gate field effect transistors

References

    1. 1)
      • S.M. Sze . (1981) Physics of semiconductor devices.
    2. 2)
      • T.P. Ma , P.V. Dressendorfer . (1989) Ionising radiation effects in MOS devices and circuits.
    3. 3)
      • D.M. Long . A radiation effects large signal equivalent circuit for MOS transistors. IEEE Trans. Nucl. Sci. , 210 - 216
    4. 4)
      • D. Jeon Su , E.D. Burk . MOSFET electron inversion layer mobility – Aphysically based semi-empirical model for a wide temperature range. IEEE Trans. Electron Devices , 1456 - 1463
    5. 5)
      • K.F. Galloway , M. Gaitan , T.J. Russel . A simple model for separating interface and oxide charges in MOS devicecharacteristics. IEEE Trans. Nucl. Sci. , 1497 - 1501
    6. 6)
      • T.P. Ma , G. Scoggan , R. Leone . Effect of electron beam radiation on MOSstructures by 25 keV electron beam irradiation in p-type and n-type MOS capacitor. Appl. Phys. Lett. , 2 , 61 - 63
    7. 7)
      • C.L. Wilson , J.L. Blue . Two-dimensional modeling of n-channel MOSFETsincluding radiation induced interface and oxide charge. IEEE Trans. Nucl. Sci. , 1448 - 1452
    8. 8)
      • K.H. Zaininger , A.G. Holmes-Siedle . A survey of radiation effects on metal-insulator-semiconductor devices. RCA Rev. , 2 , 208 - 240
    9. 9)
      • J.R. Brews . A charge sheet model of the MOSFET. Solid State Electron. , 345 - 355
    10. 10)
      • D.M. Fleetwood , T.L. Meisenheimer , J.H. Scofield . 1/f noise and radiation effects in MOS devices. IEEE Trans. Electron Devices , 1953 - 1963
    11. 11)
      • J.M. Benedetto , H.E. Boesch . MOSFET and MOS capacitor responses to ionising radiation. IEEE Trans. Nucl. Sci. , 1461 - 1466
    12. 12)
      • J.H. Scofield , M. Trawick , P. Klimecky , D.M. Fleetwood . Co-relation between preirradiated channel mobility and radiation inducedinterface trap charge in MOS. Appl. Phys. Lett. , 2782 - 2784
    13. 13)
      • A. Shanware , N. Godambe , J. Vasi , A. Chandorkar , A. Das . (1996) Modeling and characterisation of commercial C-MOS ICs under radiation.
    14. 14)
      • E.G. Stassinopoulos , G.M. Brucker , O. Van-Gunten . Total dose and dose rate dependence of proton damage in MOS devices duringand after irradiation. IEEE Trans. Nucl. Sci. , 1444 - 1447
    15. 15)
      • P.S. Winokur , K.G. Kerris , L. Harper . Predicting C-MOS inverter response in nuclear and space environments. IEEE Trans. Nucl. Sci. , 4326 - 4332
    16. 16)
      • H.K. Chumber , P.P. Kalavade , C.D. Parikh , A. Das . (1996) RADSPICE: A circuit simulator to predict the effects of radiation.
    17. 17)
      • S.C. Sun , J.D. Plummer . Electron mobility in inversion and accumulation layeron thermally oxidised silicon surfaces. IEEE Trans. Electron Devices , 1497 - 1508
    18. 18)
      • K.F. Galloway , C.L. Wilson , L.C. Witte . Charge sheet model fitting to extract radiation induced oxide and interfacecharge. IEEE Trans. Nucl. Sci. , 4461 - 4465
    19. 19)
      • S. Ekbote , D. Tambe , P. Zaman , H.K. Dangat , M. Khare , P. Sinha , S. Rodd , N. Bukhanwala , J. Vasi , D.K. Sharma , A. Das . (1996) Simulation of radiation effects in MOSFETs.
    20. 20)
      • D.M. Caughy , R.E. Thomas . Carrier mobilities in silicon empirically related to doping and field. IEEE Proc. (Lett.) , 2192 - 2193
http://iet.metastore.ingenta.com/content/journals/10.1049/ip-cds_20000203
Loading

Related content

content/journals/10.1049/ip-cds_20000203
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address