Analytical model for current transport in organic thin-film transistors

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Analytical model for current transport in organic thin-film transistors

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The I–V characteristics of organic thin-film transistors are examined and a model is proposed that could explain the behaviour of the drain current in the ‘subthreshold’ mode. The model proposes that an injection current at the source dominates the ‘subthreshold’ current at positive gate voltage and the magnitude of this current is modulated by space charge residing in the bulk of the thin film. It is further proposed that a guard ring around the source could minimise the injection current.

Inspec keywords: MOSFET; electric current; organic semiconductors; thin film transistors; semiconductor device models; space charge

Other keywords: injection current minimisation; drain current; organic thin-film transistors; analytical model; subthreshold current; space charge; subthreshold mode; source guard ring; positive gate voltage; current transport; organic TFT; I-V characteristics

Subjects: Insulated gate field effect transistors; Semiconductor device modelling, equivalent circuits, design and testing

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