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New current conveyor for high-speed low-power current sensing

New current conveyor for high-speed low-power current sensing

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A novel low-voltage current conveyor for fast CMOS SRAM applications is presented. The sensing speed is independent of the bit-line capacitances and a positive feedback technique is employed to give the circuit a high-speed and low-power operation. Performance evaluation has shown that, based on equal area ratios, the new conveyor outperforms the conventional circuit in terms of speed and average power dissipation by at least 30%. The static behaviour of the basic circuit is analysed, and HSPICE simulations have been used to characterise the circuits. Experimental results have verified the functionality of the new circuit and its superiority over the conventional CMOS current conveyor.

References

    1. 1)
      • K.S. Yeo , S.S. Rofail . A full-swing high speed CBiCMOS digital circuit for low-voltage applications. IEE Proc. Circuits Devices Syst. , 1 , 8 - 14
    2. 2)
      • Y.K. Seng , S.S. Rofail . A 1.1 V full-swing doublebootstrapped BiCMOS logic gates. IEE Proc. Circuits Devices Syst. , 1 , 41 - 45
    3. 3)
      • S.S. Rofail , K.S. Yeo . New complementary BiCMOS digital gates forlow-voltage environments. Solid-State Electron. , 5 , 681 - 687
    4. 4)
      • N. Shibata . Current sense amplifiers for low-voltage memories. IEICE Trans. Electron. , 8 , 1120 - 1130
    5. 5)
      • M. Takada , K. Nakamura , T. Yamazaki . High speed submicron BiCMOS memory. IEEE J. Solid-State Circuits , 3 , 497 - 505
    6. 6)
      • A.S. Shubat , R. Kazerounian , R. Irani , A. Roy , G.A. Rezvani , B. Eitan , C.Y. Yang . A bipolar load CMOS SRAM cell for embedded applications. IEEE Electron Device Lett. , 5 , 169 - 171
    7. 7)
      • E. Seevinck , P.J.V. Beers , H. Ontrop . Current-mode techniques for high-speed VLSI circuits with applicationto current senseamplifier for CMOS SRAM's. IEEE J. Solid-State Circuits , 5 , 525 - 536
    8. 8)
      • K.Y. Toh , P.K. Ko , R.G. Meyer . An engineering model for short-channel MOS devices. IEEE J. Solid-State Circuits , 4 , 950 - 958
    9. 9)
      • N. Weste , K. Eshraghian . (1985) Principles of CMOS VLSI design, a system perspective.
    10. 10)
      • D.A. Pucknell , K. Eshraghian . (1988) Basic VLSI design systemand circuit.
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