A new trial function for the base doping profile in AlGaAs/GaAs heterojunction bipolar transistor (HBT) is proposed. It is found that for certain doping parameters this base doping profile will minimise the base transit time. Furthermore, this function is neither exponential nor Gaussian as claimed by previous studies. In the paper the base width and the peak base doping are held constant.
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http://iet.metastore.ingenta.com/content/journals/10.1049/ip-cds_19971488
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content/journals/10.1049/ip-cds_19971488
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