Ar ion implant damage gettering of generation impurities in silicon employing voltage ramping and nitrogen backscattering

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Ar ion implant damage gettering of generation impurities in silicon employing voltage ramping and nitrogen backscattering

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© The Institution of Electrical Engineers
Published

The effects of Ar-ion implant gettering has been investigated using the linear voltage ramp applied to m.o.s. capacitors. A comparison is made with control (not implanted) samples and N+-ion Rutherford backscattering is used to examine the precipitation of generation impurities by the damaged layers. The gettering anneals were carried out over the temperature range 950°C–1100°C and for various times from 15 min to 120 min. It is shown that long gettering anneal times and high anneal temperatures both have a detrimental effect on minority-carrier lifetime.

Inspec keywords: ion implantation; semiconductor doping; minority carriers; carrier lifetime; silicon; particle backscattering; annealing; metal-insulator-semiconductor structures; elemental semiconductors

Other keywords: minority carrier lifetime; annealing; ion implantation; impurity generation; Si; Ar; gettering anneals; linear voltage ramp; implant damage gettering; Rutherford backscattering; MOS capacitors; elemental semiconductors

Subjects: Electrical properties of metal-insulator-semiconductor structures; Other heat and thermomechanical treatments; Doping and implantation of impurities; Elemental semiconductors; Metal-insulator-semiconductor structures; Semiconductor doping; Electrical conductivity of elemental semiconductors

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