Influence of interface states on the charge injection in m.n.o.s. memory devices
Switching characteristics and charge centroids of m.n.o.s. memory devices with different interface state densities were studied at 25°C and at low temperatures. Experimental evidence, showing that interface states with high density affect the charging process in m.n.o.s. memory devices, is presented.
Errata
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Erratum: Influence of interface states on the charge injection in m.n.o.s. memory devices