Influence of interface states on the charge injection in m.n.o.s. memory devices

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Influence of interface states on the charge injection in m.n.o.s. memory devices

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© The Institution of Electrical Engineers
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Errata or comment

Switching characteristics and charge centroids of m.n.o.s. memory devices with different interface state densities were studied at 25°C and at low temperatures. Experimental evidence, showing that interface states with high density affect the charging process in m.n.o.s. memory devices, is presented.

Inspec keywords: metal-insulator-semiconductor devices; semiconductor storage devices; interface electron states

Other keywords: MNOS; switching characteristics; memory devices; interface states; charge injection; metal nitride oxide semiconductor

Subjects: Semiconductor storage; Other field effect devices

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An Erratum has been published for this content:
Erratum: Influence of interface states on the charge injection in m.n.o.s. memory devices